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dc.rights.availabilityUnrestricted.
dc.creatorMahmud, Zia Uddin
dc.date.accessioned2016-11-14T23:13:14Z
dc.date.available2011-02-18T19:28:23Z
dc.date.available2016-11-14T23:13:14Z
dc.date.issued1996-05
dc.identifier.urihttp://hdl.handle.net/2346/10900en_US
dc.description.abstractThe maximum power level that can be controlled by power MOSFETs is limited by the maximum allowable power dissipation. Recent publications^^ indicate, that operation of power MOSFETs at cryogenic temperatures will significantly (by more than an order of magnitude) reduce losses and increase their switching speed and power handling capability. The losses of power MOSFETs are conduction losses and switching losses due to either mechanism are reduced at cryogenic temperatures.
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherTexas Tech Universityen_US
dc.subjectMetal oxide semiconductor field-effect transistorsen_US
dc.subjectPower transistorsen_US
dc.subjectLow temperaturesen_US
dc.titlePerformance of power Mosferts at cryogenic temperatures
dc.typeThesis


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