Performance of power Mosferts at cryogenic temperatures
| dc.creator | Mahmud, Zia Uddin | |
| dc.date.accessioned | 2016-11-14T23:13:14Z | |
| dc.date.available | 2011-02-18T19:28:23Z | |
| dc.date.available | 2016-11-14T23:13:14Z | |
| dc.date.issued | 1996-05 | |
| dc.description.abstract | The maximum power level that can be controlled by power MOSFETs is limited by the maximum allowable power dissipation. Recent publications^^ indicate, that operation of power MOSFETs at cryogenic temperatures will significantly (by more than an order of magnitude) reduce losses and increase their switching speed and power handling capability. The losses of power MOSFETs are conduction losses and switching losses due to either mechanism are reduced at cryogenic temperatures. | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | http://hdl.handle.net/2346/10900 | en_US |
| dc.language.iso | eng | |
| dc.publisher | Texas Tech University | en_US |
| dc.rights.availability | Unrestricted. | |
| dc.subject | Metal oxide semiconductor field-effect transistors | en_US |
| dc.subject | Power transistors | en_US |
| dc.subject | Low temperatures | en_US |
| dc.title | Performance of power Mosferts at cryogenic temperatures | |
| dc.type | Thesis |