Browsing by Subject "ZnO"
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Item Design of Zinc Oxide Based Solid-State Excitonic Solar Cell with Improved Efficiency(2012-02-14) Lee, Tao HuaExcitonic photovoltaic devices, including organic, hybrid organic/inorganic, and dye-sensitized solar cells, are attractive alternatives to conventional inorganic solar cells due to their potential for low cost and low temperature solution-based processing on flexible substrates in large scale. Though encouraging, they are currently limited by the efficiency from not yet optimized structural and material parameters and poor overall knowledge regarding the fundamental details. This dissertation aims to achieve improved performance of hybrid solar cells by enhancing material property and designing new device architecture. The study begins with the addition of XD-grade single-walled carbon nanotube (XDSWNT) into poly(3-hexylthiophene) (P3HT) to improve the current density. By having a weight ratio of XDSWNT and P3HT equaled to 0.1:1, short-circuit current was quadrupled from 0.12 mA cm-2 to 0.48 mA cm-2 and solar cell efficiency was tripled from 0.023% to 0.07%, compared to devices with pure P3HT as a hole transport material. Secondly, a significant improvement in device efficiency with 250 nm long ZnO nanorod arrays as photoanodes has been achieved by filling the interstitial voids of the nanorod arrays with ZnO nanoparticles. The overall power conversion efficiency increased from 0.13% for a nanorod-only device to 0.34% for a device with combined nanoparticles and nanorod arrays. The higher device efficiency in solid-state DSSCs with hybrid nanorod/nanoparticle photoanodes is originated from both large surface area provided by nanoparticles for dye adsorption and efficient charge transport provided by the nanorod arrays to reduce the recombinations of photogenerated carriers. Followed by the novel layer-by-layer self-assembly deposition process, the hybrid photoanode study was extended to the longer ZnO nanorod arrays. The best performance, 0.64%, was achieved when the thickness of the photoanodes equaled to 1.2 ?m. Finally, the photovoltaic devices were modified by adding ZnO nanoarpticles into P3HT to increase interfacial area between ZnO and P3HT. The efficiency was enhanced from 0.18% to 0.45% when the ZnO nanorod arrays were 625 nm in length. Our successful design of the device morphology significantly contributes to the performance of solid-state hybrid solar cells.Item Processing and Characterization of P-Type Doped Zinc Oxide Thin Films(2013-03-18) Myers, Michelle AnneApplications of zinc oxide (ZnO) for optoelectronic devices, including light emitting diodes, semiconductor lasers, and solar cells have not yet been realized due to the lack of high-quality p-type ZnO. In the research presented herein, pulsed laser deposition is employed to grow Ag-doped ZnO thin films, which are characterized in an attempt to understand the ability of Ag to act as a p-type dopant. By correlating the effects of the substrate temperature, oxygen pressure, and laser energy on the electrical and microstructural properties of Ag-doped ZnO films grown on c-cut sapphire substrates, p-type conductivity is achieved under elevated substrate temperatures. Characteristic stacking fault features have been continuously observed by transmission electron microscopy in all of the p-type films. Photoluminescence studies on n-type and p-type Ag-doped ZnO thin films demonstrate the role of stacking faults in determining the conductivity of the films. Exciton emission attributed to basal plane stacking faults suggests that the acceptor impurities are localized nearby the stacking faults in the n-type films. The photoluminescence investigation provides a correlation between microstructural characteristics and electrical properties of Ag- doped ZnO thin films; a link that enables further understanding of the doping nature of Ag impurities in ZnO. Under optimized deposition conditions, various substrates are investigated as potential candidates for ZnO thin film growth, including r -cut sapphire, quartz, and amorphous glass. Electrical results indicated that despite narrow conditions for obtaining p-type conductivity at a given substrate temperature, flexibility in substrate choice enables improved electrical properties. In parallel, N+-ion implantation at elevated temperatures is explored as an alternative approach to achieve p-type ZnO. The ion implantation fluence and temperature have been optimized to achieve p-type conductivity. Transmission electron microscopy reveals that characteristic stacking fault features are present throughout the p-type films, however in n-type N-doped films high-density defect clusters are observed. These results suggest that the temperature under which ion implantation is performed plays a critical role in determining the amount of dynamic defect re- combination that can take place, as well as defect cluster formation processes. Ion implantation at elevated temperatures is shown to be an effective method to introduce increased concentrations of p-type N dopants while reducing the amount of stable post-implantation disorder. Finally, the fabrication and properties of p-type Ag-doped ZnO/n-type ZnO and p-type N-doped ZnO/n-type ZnO thin film junctions were reported. For the N-doped sample, a rectifying behavior was observed in the I-V curve, consistent with N-doped ZnO being p-type and forming a p-n junction. The turn-on voltage of the device was ?2.3 V under forward bias. The Ag-doped samples did not result in rectifying behavior as a result of conversion of the p-type layer to n-type behavior under the n- type layer deposition conditions. The systematic studies in this dissertation provide possible routes to grow p-type Ag-doped ZnO films and in-situ thermal activation of N-implanted dopant ions, to overcome the growth temperature limits, and to push one step closer to the future integration of ZnO-based devices.Item Toward Understanding Dynamic Annealing Processes in Irradiated Ceramics(2013-03-04) Myers, MichaelHigh energy particle irradiation inevitably generates defects in solids in the form of collision cascades. The ballistic formation and thermalization of cascades occur rapidly and are believed to be reasonably well understood. However, knowledge of the evolution of defects after damage cascade thermalization, referred to as dynamic annealing, is quite limited. Unraveling the mechanisms associated with dynamic annealing is crucial since such processes play an important role in the formation of stable post-irradiation disorder in ion-beam-processed semiconductors and determines the ?radiation tolerance? of many nuclear materials. The purpose of this dissertation is to further our understanding of the processes involved in dynamic annealing. In order to achieve this, two main tasks are undertaken. First, the effects of dynamic annealing are investigated in ZnO, a technologically relevant material that exhibits very high dynamic defect annealing at room temperature. Such high dynamic annealing leads to unusual defect accumulation in heavy ion bombarded ZnO. Through this work, the puzzling features that were observed more than a decade ago in ion-channeling spectra have finally been explained. We show that the presence of a polar surface substantially alters damage accumulation. Non-polar surface terminations of ZnO are shown to exhibit enhanced dynamic annealing compared to polar surface terminated ZnO. Additionally, we demonstrate one method to reduce radiation damage in polar surface terminated ZnO by means of a surface modification. These results advance our efforts in the long-sought-after goal of understanding complex radiation damage processes in ceramics. Second, a pulsed-ion-beam method is developed and demonstrated in the case of Si as a prototypical non-metallic target. Such a method is shown to be a novel experimental technique for direct extraction of dynamic annealing parameters. The relaxation times and effective diffusion lengths of mobile defects during the dynamic annealing process play a vital role in damage accumulation. We demonstrate that these parameters dominate the formation of stable post-irradiation disorder. In Si, a defect lifetime of ? 6 ms and a characteristic defect diffusion length of ? 30 nm are measured. These results should nucleate future pulsed-beam studies of dynamic defect interaction processes in technologically relevant materials. In particular, understanding length- and time-scales of defect interactions are essential for extending laboratory findings to nuclear material lifetimes and to the time-scales of geological storage of nuclear waste.Item Vapor transport techniques for growing macroscopically uniform zinc oxide nanowires(2009-08) Baker, Chad Allan; Hall, Matthew John; Shi, Li, Ph. D.ZnO nanowires were grown using carbothermal reduction and convective vapor phase transport in a tube furnace. Si <100> substrates that were 20 mm x 76.2 mm were sputter coated with 2 nm to 50 nm gold which formed nanoparticles on the order of 50 nm in diameter through a process of Ostwald ripening upon being heated. Growth temperatures were varied from 800ºC to 1000ºC, flow rates were varied from 24 sccm to 3300 sccm, and growth durations were varied from 8 minutes to 5 hours. Vapor phase Zn, CO, and CO2, produced by carbothermal reduction and suspended in an Ar atmosphere, were flowed over the Si substrates. The Au nanoparticles formed an eutectic alloy with Zn, causing them to become liquid nanodroplets which catalyzed vapor-liquid-solid nanowire growth. The nanowires were also synthesized by self-catalyzing vapor-solid growth in some cases. Using the tube furnace never resulted in more than 50% of the substrate being covered by nanowires. It was found that a bench-top furnace could achieve nearly 100% nanowire coverage by placing the 20 mm x 76.2 mm sample face down in a quartz boat less than 2 mm above the source powder. This was because minimizing the distance between the sample and the source powder was critical to achieve macroscopically uniform growth consistently.