Electrical properties of single GaAs, Bi₂S₃ and Ge nanowires

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dc.contributor.advisorKorgel, Brian A.en
dc.creatorSchricker, April Dawnen
dc.date.accessioned2008-08-28T22:42:07Zen
dc.date.accessioned2017-05-11T22:17:06Z
dc.date.available2008-08-28T22:42:07Zen
dc.date.available2017-05-11T22:17:06Z
dc.date.issued2005en
dc.descriptiontexten
dc.description.departmentChemical Engineeringen
dc.format.mediumelectronicen
dc.identifierb6112607xen
dc.identifier.oclc71003443en
dc.identifier.urihttp://hdl.handle.net/2152/2301en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshNanowiresen
dc.subject.lcshGallium arsenide--Electric propertiesen
dc.subject.lcshBismuth compounds--Electric propertiesen
dc.subject.lcshGermanium--Electric propertiesen
dc.titleElectrical properties of single GaAs, Bi₂S₃ and Ge nanowiresen
dc.type.genreThesisen

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