Enhancement of integrated circuits performance : metal gate electrodes and strained silicon MOSFETs

Simple item page
dc.contributor.advisorLee, Jack Chung-Yeungen
dc.creatorThareja, Gauraven
dc.date.accessioned2016-04-13T14:22:37Z
dc.date.accessioned2018-01-22T22:29:44Z
dc.date.available2016-04-13T14:22:37Z
dc.date.available2018-01-22T22:29:44Z
dc.date.issued2006-05en
dc.description.abstractEnhancement of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device performance has been achieved by work function engineering of Metal gates (controlling and lowering threshold Voltage (VTH)) and incorporating Strained Silicon as a substrate (higher mobility of the carriers). However there has not been any report on successful demonstration of low work function MOS Metal Gate Electrode and reliability of MOS Strained SOI devices. The thesis investigates a novel approach of tuning the work function of thermally stable Tantalum Nitride (TaN) metal gate using a Gadolinium buffer layer on Hafnium based high-k gate dielectrics. An NMOS compatible low work function metal gate resulting in lower VTH, has been successfully demonstrated. The thesis also explores the Bias Temperature Instability (BTI reliability) of the Strained Silicon on Insulator (S-SOI) MOSFETs for the first time. Degraded Reliability has been observed on strained devices and a plausible mechanism has been proposed.en
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifierdoi:10.15781/T22N4Ren
dc.identifier.urihttp://hdl.handle.net/2152/34201en
dc.language.isoenen
dc.relation.ispartofUT Electronic Theses and Dissertationsen
dc.rightsCopyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.rights.restrictionRestricteden
dc.subjectMetal Oxide Semiconductor Field Effect Transistor (MOSFET)en
dc.subjectMetal gatesen
dc.subjectStrained siliconen
dc.titleEnhancement of integrated circuits performance : metal gate electrodes and strained silicon MOSFETsen
dc.typeThesisen
dc.type.genreThesisen

Files

Collections

University of Texas at Austin