Characterization of 125-MM pulsed power thyristors

The objective of this thesis is two-fold. The first objective is to characterize the recovery time of the SPT411BHT Pulse Power Thyristor under high current situations. In addition, determine the feasibility of reducing the recovery time by removing charge carriers from the gate of the device. The second objective is to develop a method to determine the thyristor junction temperature increase due to single shot conduction. This thesis will cover semiconductor and thyristor theory, an explanation of the circuits designed for the research, and the results of the research.