Formation of ultra-thin Ta-based Cu diffusion barrier with atomic layer deposition

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dc.contributor.advisorHo, P. S.en
dc.creatorLui, Junjunen
dc.date.accessioned2008-08-28T22:56:07Zen
dc.date.accessioned2017-05-11T22:17:19Z
dc.date.available2008-08-28T22:56:07Zen
dc.date.available2017-05-11T22:17:19Z
dc.date.issued2006en
dc.descriptiontexten
dc.description.departmentMaterials Science and Engineeringen
dc.format.mediumelectronicen
dc.identifierb64850419en
dc.identifier.oclc84736130en
dc.identifier.urihttp://hdl.handle.net/2152/2573en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshDielectrics--Surfacesen
dc.titleFormation of ultra-thin Ta-based Cu diffusion barrier with atomic layer depositionen
dc.type.genreThesisen

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