Metal-oxide-semiconductor devices based on epitaxial germanium layers grown selectively directly on silicon substrates by ultra-high-vacuum chemical vapor deposition
| dc.contributor.advisor | Banerjee, Sanjay | en |
| dc.creator | Donnelly, Joseph Patrick, 1965- | en |
| dc.date.accessioned | 2012-10-16T17:12:29Z | en |
| dc.date.accessioned | 2017-05-11T22:28:44Z | |
| dc.date.available | 2012-10-16T17:12:29Z | en |
| dc.date.available | 2017-05-11T22:28:44Z | |
| dc.date.issued | 2009-05 | en |
| dc.description | text | en |
| dc.description.abstract | This document details experiments attempting to increase the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) which are the mainstay of the semiconductor industry. Replacing the silicon channel with an ultra-thin epitaxial germanium layer grown selectively on a silicon (100) bulk wafer is examined in detail. The gate oxide chosen for the germanium devices is a high-k gate oxide, HfO2, and the gate electrode is a metal gate, tantalum-nitride. They demonstrate large improvements in drive current and mobility over identically processed silicon PMOSFETs. In addition to the planar germanium PMOSFETs, a process has been developed for 50nm and smaller germanium P-finFETs and N and P germanium tunnel-FETs. The patterning of sub-30nm wide and 230nm tall three dimensional fins has been done with electron beam lithography and dry plasma etching. The processes to deposit high-k gate oxide and metal gates on the sub-30nm wide fins have been developed. All that remains for the production of these devices is electron beam lithography with a maximum misalignment error of 40nm. | en |
| dc.description.department | Electrical and Computer Engineering | en |
| dc.format.medium | electronic | en |
| dc.identifier.uri | http://hdl.handle.net/2152/18388 | en |
| dc.language.iso | eng | en |
| dc.rights | Copyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works. | en |
| dc.subject.lcsh | Metal oxide semiconductor field-effect transistors | en |
| dc.subject.lcsh | Germanium compounds | en |
| dc.subject.lcsh | Gate array circuits | en |
| dc.title | Metal-oxide-semiconductor devices based on epitaxial germanium layers grown selectively directly on silicon substrates by ultra-high-vacuum chemical vapor deposition | en |