First-principles and kinetic Monte Carlo simulation of dopant diffusion in strained Si and other materials

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dc.contributor.advisorBanerjee, Sanjayen
dc.creatorLin, Li, 1973-en
dc.date.accessioned2008-08-28T23:07:22Zen
dc.date.accessioned2017-05-11T22:17:29Z
dc.date.available2008-08-28T23:07:22Zen
dc.date.available2017-05-11T22:17:29Z
dc.date.issued2006en
dc.descriptiontexten
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifierb65470722en
dc.identifier.oclc156796470en
dc.identifier.urihttp://hdl.handle.net/2152/2762en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshSemiconductor doping--Mathematical modelsen
dc.subject.lcshSiliconen
dc.subject.lcshMonte Carlo methoden
dc.titleFirst-principles and kinetic Monte Carlo simulation of dopant diffusion in strained Si and other materialsen
dc.type.genreThesisen

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