Process parameters governing deep ultraviolet (DUV) data buffer yield

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dc.creatorJanakiraman, Praveena
dc.date.accessioned2016-11-14T23:29:07Z
dc.date.available2011-02-18T22:11:04Z
dc.date.available2016-11-14T23:29:07Z
dc.date.issued2002-05
dc.degree.departmentElectrical and Computer Engineeringen_US
dc.description.abstractTimely identification of causes for low quality of devices is a primary key to the profit of a semiconductor industry. There are various methods to aid the identification and rectification of defects arising from the wafer manufacturing process. Parametric data analysis is a key method to extract process related information about the wafers. Parameters like idrives, leakage currents, threshold voltages, oxide thickness, critical dimension measurements provide a wealth of details about the manufactured wafers. This thesis aims at addressing the root cause of the problem of low quality of Deep Ultra Violet data buffers after an analysis of process parameters. On finding the cause, a solution to achieving a required quality level is suggested and verified.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/2346/17721en_US
dc.language.isoeng
dc.publisherTexas Tech Universityen_US
dc.rights.availabilityUnrestricted.
dc.subjectPhotoresistsen_US
dc.subjectLithographyen_US
dc.subjectSemiconductor wafersen_US
dc.subjectPhotolithographyen_US
dc.titleProcess parameters governing deep ultraviolet (DUV) data buffer yield
dc.typeThesis

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