First principles modeling of arsenic and fluorine behavior in crystalline silicon during ultrashallow junction formation

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dc.contributor.advisorHwang, Gyeong S.en
dc.contributor.advisorEdgar, Thomas F.en
dc.creatorHarrison, Scott Anthonyen
dc.date.accessioned2008-08-28T22:53:20Zen
dc.date.accessioned2017-05-11T22:17:17Z
dc.date.available2008-08-28T22:53:20Zen
dc.date.available2017-05-11T22:17:17Z
dc.date.issued2006en
dc.descriptiontexten
dc.description.departmentChemical Engineeringen
dc.format.mediumelectronicen
dc.identifierb61295668en
dc.identifier.oclc72714738en
dc.identifier.urihttp://hdl.handle.net/2152/2520en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshSemiconductors--Junctionsen
dc.subject.lcshSemiconductor dopingen
dc.subject.lcshSilicon crystalsen
dc.subject.lcshDensity functionalsen
dc.subject.lcshArsenicen
dc.subject.lcshFluorineen
dc.titleFirst principles modeling of arsenic and fluorine behavior in crystalline silicon during ultrashallow junction formationen
dc.type.genreThesisen

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