Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

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dc.contributor.advisorBanerjee, Sanjayen
dc.creatorKelly, David Questen
dc.date.accessioned2008-08-28T23:15:16Zen
dc.date.accessioned2017-05-11T22:17:35Z
dc.date.available2008-08-28T23:15:16Zen
dc.date.available2017-05-11T22:17:35Z
dc.date.issued2006en
dc.descriptiontexten
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifierb68635667en
dc.identifier.oclc166229357en
dc.identifier.urihttp://hdl.handle.net/2152/2903en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshMetal oxide semiconductor field-effect transistors--Design and constructionen
dc.subject.lcshGermanium compoundsen
dc.subject.lcshGermanium crystalsen
dc.subject.lcshChemical vapor depositionen
dc.titleMetal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor depositionen
dc.type.genreThesisen

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