Preparation Of Pyramidal Zinc Oxide Particle As An Antireflective Coating For Application In Solar Cell.

dc.contributorBanik, Amiten_US
dc.date.accessioned2010-03-03T23:30:33Z
dc.date.accessioned2011-08-24T21:43:17Z
dc.date.available2010-03-03T23:30:33Z
dc.date.available2011-08-24T21:43:17Z
dc.date.issued2010-03-03T23:30:33Z
dc.date.submittedJanuary 2009en_US
dc.description.abstractThere is a lot of research going on in the field of solar cell to increase the energy conversion efficiency. Many new methods have been implemented and new processes and materials have been suggested in the recent past. This research deals with the preparation of pyramidal structure zinc oxide particles as an antireflective coating for polycrystalline and non-silicon solar cell. The process involved a cost effective method that is electrochemical deposition of zinc oxide on silicon mold. The mold, inverted pyramid, is prepared by photolithographic process PECVD silicon nitride as the hard mask and wet etching and then electrochemical deposition is carried to deposit zinc oxide into the molds. The deposition was carried out in a 0.1 mole Zinc nitrate bath at 60ºC using a potentiostat. X-ray diffraction measurement is also carried out to determine verify the deposited zinc oxide.The samples are annealed at different temperature and then reflection and transmission parameters is found using spetrophotometer measurement and it is found to be around 80% transmission. To extract the reflection and transmission zinc oxide is deposited on Indium Tin Oxide(ITO), prepared by sputtering having a thickness of ~2&mum. The bandgap is also calculated from the transmission and reflection data and is found to be 3.4eV. Finally the deposited particles are extracted and SEM characterization is done on the particles.en_US
dc.identifier.urihttp://hdl.handle.net/10106/2026
dc.language.isoENen_US
dc.publisherElectrical Engineeringen_US
dc.titlePreparation Of Pyramidal Zinc Oxide Particle As An Antireflective Coating For Application In Solar Cell.en_US
dc.typeM.S.en_US

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