Ion implant virtual metrology for process monitoring

Simple item page
dc.contributor.advisorEdgar, Thomas F.en
dc.contributor.committeeMemberDjurdjanovic, Draganen
dc.creatorFowler, Courtney Marieen
dc.date.accessioned2010-09-07T15:59:51Zen
dc.date.accessioned2010-09-07T15:59:57Zen
dc.date.accessioned2017-05-11T22:20:10Z
dc.date.available2010-09-07T15:59:51Zen
dc.date.available2010-09-07T15:59:57Zen
dc.date.available2017-05-11T22:20:10Z
dc.date.issued2009-12en
dc.date.submittedDecember 2009en
dc.date.updated2010-09-07T15:59:57Zen
dc.descriptiontexten
dc.description.abstractThis thesis presents the modeling of tool data produced during ion implantation for the prediction of wafer sheet resistance. In this work, we will use various statistical techniques to address challenges due to the nature of equipment data: high dimensionality, colinearity, parameter interactions, and non-linearities. The emphasis will be data integrity, variable selection, and model building methods. Different variable selection and modeling techniques will be evaluated using an industrial data set. Ion implant processes are fast and depending on the monitoring frequency of the equipment, late detection of a process shift could lead to the loss of a significant amount of product. The main objective of the research presented in this thesis is to identify any ion implant parameters that can be used to formulate a virtual metrology model. The virtual metrology model would then be used for process monitoring to ensure stable processing conditions and consequent yield guarantees.en
dc.format.mimetypeapplication/pdfen
dc.identifier.urihttp://hdl.handle.net/2152/ETD-UT-2009-12-427en
dc.language.isoengen
dc.subjectVirtual metrologyen
dc.subjectIon implanten
dc.subjectBPNNen
dc.subjectRBFNen
dc.subjectVariable selectionen
dc.subjectSemiconductor manufacturingen
dc.titleIon implant virtual metrology for process monitoringen
dc.type.genrethesisen

Files

Collections

University of Texas at Austin