Developing and implementing a Raman NSOM for the characterization of semiconductor materials

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dc.contributor.advisorCampion, Alanen
dc.contributor.committeeMemberBarbara, Paulen
dc.contributor.committeeMemberMullins, C. B.en
dc.contributor.committeeMemberStevenson, Keith J.en
dc.contributor.committeeMemberVanden Bout, David A.en
dc.creatorFurst-Pikus, Greyhm Matthewen
dc.date.accessioned2010-09-30T17:30:18Zen
dc.date.accessioned2010-09-30T17:30:24Zen
dc.date.accessioned2017-05-11T22:20:17Z
dc.date.available2010-09-30T17:30:18Zen
dc.date.available2010-09-30T17:30:24Zen
dc.date.available2017-05-11T22:20:17Z
dc.date.issued2010-05en
dc.date.submittedMay 2010en
dc.date.updated2010-09-30T17:30:24Zen
dc.descriptiontexten
dc.description.abstractWe have designed and constructed a novel Raman near-field scanning optical microscope (NSOM) and evaluated its performance characteristics with the goal of characterizing the strain in nanoscopic silicon structures. The Raman NSOM was built around a commercial Raman microscope to which a custom built stage was added to provide precise control over the tip position above the sample (z) using shear-force microscopy feedback as well as sample scanning in the x-y plane. The motion control axes were calibrated to better than 1 nm in z and approximately 20 nm in x and y. The NSOM provides both topographical images and Raman mapping with a lateral spectral resolution of 150-300 nm. The experiments described herein were enabled by gold-coated chemically etched NSOM tips with aperture diameters ranging between 60 and 150 nm. The sensitivity of the instrument was demonstrated by the high signal-to-noise ratios observed for Raman scattering by diamond and silicon in reflection mode. Spatial resolution and spectral sensitivity were demonstrated by obtaining well-resolved tip-sample separation curves that provide an accurate estimate of tip aperture size during an experiment.en
dc.format.mimetypeapplication/pdfen
dc.identifier.urihttp://hdl.handle.net/2152/ETD-UT-2010-05-902en
dc.language.isoengen
dc.subjectRaman NSOMen
dc.subjectSiliconen
dc.subjectControl loopen
dc.subjectDiamonden
dc.subjectShear forceen
dc.subjectStrained siliconen
dc.titleDeveloping and implementing a Raman NSOM for the characterization of semiconductor materialsen
dc.type.genrethesisen

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