Reliability of a Gallium Arsenide MESFET

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dc.creatorYin, Chenwei John
dc.date.accessioned2016-11-14T23:07:48Z
dc.date.available2011-02-18T22:32:46Z
dc.date.available2016-11-14T23:07:48Z
dc.date.issued1980-12
dc.description.abstractNot Available.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/2346/18415en_US
dc.language.isoeng
dc.publisherTexas Tech Universityen_US
dc.rights.availabilityUnrestricted.
dc.subjectField-effect transistorsen_US
dc.subjectIntegrated circuitsen_US
dc.subjectElectrodiffusionen_US
dc.subjectGallium arsenideen_US
dc.subjectReliability (Engineering)en_US
dc.titleReliability of a Gallium Arsenide MESFET
dc.typeThesis

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