Schottky diodes on GaN (gallium nitride) semiconductors

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dc.creatorVijayan, Veena
dc.date.accessioned2016-11-14T23:16:52Z
dc.date.available2011-02-18T20:46:37Z
dc.date.available2016-11-14T23:16:52Z
dc.date.issued2000-08
dc.degree.departmentElectrical and Computer Engineeringen_US
dc.description.abstractThe electrical characteristics of Au and Ni Schottky barriers on n-type GaN grown by gas phase molecular beam epitaxy were investigated. Capacitance-Voltage and Current-Voltage techniques were used to calculate the barrier height, carrier concentration and ideality factor. Two different processing techniques, one-mask and two-mask process, were used to fabricate the Schottky diodes. An electron gun evaporator was used to deposit the metal contacts on the n-type GaN surface. The metal contacts were deposited at a pressure of 10^-8 Torr. Using the one-mask process, the forward current ideality factor was 1.01 and 1.20 for Au/n-GaN and Ni/n-GaN Schottky diodes, respectively. The Capacitance-Voltage and Current-Voltage measurements show that the barrier height was 1.2 eV and 0.9eV for Au/n-GaN and 1.12 eV and 0.91 eV for Ni/n-GaN Schottky diodes, respectively. Using the two-mask process, the forward current ideality factor was 1.30 and 1.02 for Au and Ni Schottky diodes, respectively. The Capacitance-Voltage and Current-Voltage measurements show that the barrier height was 2.02 eV and 0.85eV for Au/n-GaN and 2.30 eV and 0.86 eV for Ni/n-GaN Schottky diodes, respectively.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/2346/14701en_US
dc.language.isoeng
dc.publisherTexas Tech Universityen_US
dc.rights.availabilityUnrestricted.
dc.subjectSchottky-barrieren_US
dc.subjectDiodesen_US
dc.subjectGallium nitride (GaN)en_US
dc.titleSchottky diodes on GaN (gallium nitride) semiconductors
dc.typeThesis

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