Schrödinger equation Monte Carlo simulation of nano-scaled semiconductor devices

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dc.contributor.advisorRegister, Leonard F.en
dc.creatorChen, Wanqiangen
dc.date.accessioned2008-08-28T21:54:46Zen
dc.date.available2008-08-28T21:54:46Zen
dc.date.issued2004en
dc.descriptiontexten
dc.description.abstractSemiconductor devices have been continuously scaled into the deep submicron regime. As a result, quantum effects which were neglected in semiclassical models become more and more important. Meanwhile, scattering still remains important down to the gate length around 10 nm. Accurate quantum transport simulators with scattering will be needed to explore the essential device physics. The work of this dissertation project is aimed at developing an accurate quantum transport simulation tool for deep submicron device modeling, as well as utilizing this newly developed simulation tool to study the quantum transport and scattering effects in ultra-scaled semiconductor devices. The quantum transport simulator “Schrödinger Equation Monte Carlo” (SEMC) provides a physically rigorous treatment of quantum transport and phasebreaking inelastic scattering (in 3D) via real (actual) scattering processes such as optical and acoustic phonon scattering. SEMC has been used to simulate carrier transport in nano-scaled devices in order to gauge the potential reliability of semiclassical models, phase-coherent quantum transport, and other limiting models as the transition from classical to quantum transport is approached. SEMC has also been successfully applied to study the carrier capture and transport in tunnel injection lasers. In this work, a 2D version of SEMC − SEMC-2D − has been developed. The quantum transport equations are solved self-consistently with Poisson equation. SEMC-2D has been used to simulate quantum transport in nano-scaled double gate MOSFETs. Simulation results serve not only to demonstrate the capability of this new quantum transport simulator, but also to illuminate the importance of physically accurate simulation of scattering for predictive modeling of transport in nano-scaled MOSFETs.
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifierb59299460en
dc.identifier.oclc57708579en
dc.identifier.proqst3150561en
dc.identifier.urihttp://hdl.handle.net/2152/1299en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshSchrödinger equationen
dc.subject.lcshMonte Carlo method--Computer programsen
dc.subject.lcshSemiconductorsen
dc.subject.lcshNanostructuresen
dc.titleSchrödinger equation Monte Carlo simulation of nano-scaled semiconductor devicesen
dc.type.genreThesisen

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