Circuit design and device modeling of zinc-tin oxide TFTs
| dc.contributor.advisor | Viswanathan, T. R., doctor of electrical engineering | en |
| dc.contributor.advisor | Dodabalapur, Ananth, 1963- | en |
| dc.creator | Divakar, Kiran | en |
| dc.date.accessioned | 2011-07-11T21:01:26Z | en |
| dc.date.accessioned | 2017-05-11T22:22:38Z | |
| dc.date.available | 2011-07-11T21:01:26Z | en |
| dc.date.available | 2017-05-11T22:22:38Z | |
| dc.date.issued | 2011-05 | en |
| dc.date.submitted | May 2011 | en |
| dc.date.updated | 2011-07-11T21:01:42Z | en |
| dc.description | text | en |
| dc.description.abstract | Amorphous Oxide Semiconductors (AOS) are widely being explored in the field of flexible and transparent electronics. In this thesis, solution processed zinc-tin oxide (ZTO) n-channel TFT based circuits are studied. Inverters, single stage amplifiers and ring oscillators are designed, fabricated and tested. 7-stage ring oscillators with output frequencies up to 106kHz and 5-stage ring oscillators with frequencies up to 75kHz are reported. A stable three stage op-amp with a buffered output is designed for a gain of 39.9dB with a unity gain frequency of 27.7kHz. A 7-stage ring oscillator with output frequency close to 1MHz is simulated and designed. The op-amp and the ring oscillator are ready to be fabricated and tested. An RPI model for a-Si, adapted to fit the ZTO device characteristics, is used for simulation. Development of a new model based on the physics behind charge transport in ZTO devices is explored. An expression for gate bias dependent mobility in ZTO devices is derived. | en |
| dc.description.department | Electrical and Computer Engineering | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.slug | 2152/ETD-UT-2011-05-3702 | en |
| dc.identifier.uri | http://hdl.handle.net/2152/ETD-UT-2011-05-3702 | en |
| dc.language.iso | eng | en |
| dc.subject | ZTO | en |
| dc.subject | Thin film transistors | en |
| dc.subject | FET | en |
| dc.subject | Oscillators | en |
| dc.subject | Amorphous oxide semiconductors | en |
| dc.subject | Zinc-tin oxide | en |
| dc.title | Circuit design and device modeling of zinc-tin oxide TFTs | en |
| dc.type.genre | thesis | en |