Dual work function metal gates by full silicidation of poly-Si with Ni or Ni-Co bi-layers

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dc.contributor.advisorKwong, Dim-Leeen
dc.creatorLiu, Junen
dc.date.accessioned2008-08-28T23:10:26Zen
dc.date.accessioned2017-05-11T22:17:31Z
dc.date.available2008-08-28T23:10:26Zen
dc.date.available2017-05-11T22:17:31Z
dc.date.issued2006en
dc.descriptiontexten
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifierb66061076en
dc.identifier.oclc163920039en
dc.identifier.urihttp://hdl.handle.net/2152/2817en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshSilicon oxideen
dc.subject.lcshGate array circuitsen
dc.titleDual work function metal gates by full silicidation of poly-Si with Ni or Ni-Co bi-layersen
dc.type.genreThesisen

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