Molecular-beam epitaxial growth of low-dark-current avalanche photodiodes

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dc.contributor.advisorHolmes, Archie L.en
dc.creatorHurst, Jeffrey Byron, 1977-en
dc.date.accessioned2008-08-29T00:11:11Zen
dc.date.accessioned2017-05-11T22:19:10Z
dc.date.available2008-08-29T00:11:11Zen
dc.date.available2017-05-11T22:19:10Z
dc.date.issued2007-12en
dc.description.abstractThe quaternary material system In[subscript x]Ga[subscript 1-x]As[subscript y]P[subscript 1-y] is an important material system for optoelectronic devices, specifically covering optimum fiber optic wavelengths. Among the limitations of using this material system concerning photodetector performance is generation of carriers due to material defects and impurities. This dissertation reports on the growth optimization of InGaAs using molecular-beam epitaxy for low-dark-current avalanche photodiodes through the study of the effects of the growth conditions on dark current. An optimum growth temperature of 545°C and arsenic beam equivalent pressure of 2x10⁻⁵ Torr was found for producing the lowest dark current density. Avalanche photodiodes were implemented with a dark current density 80 mA/cm² at 90% of the breakdown voltage.en
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifier.oclc221351221en
dc.identifier.urihttp://hdl.handle.net/2152/3798en
dc.language.isoengen
dc.rightsCopyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshAvalanche photodiodesen
dc.subject.lcshMolecular beam epitaxyen
dc.subject.lcshElectric currentsen
dc.titleMolecular-beam epitaxial growth of low-dark-current avalanche photodiodesen
dc.type.genreThesisen

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