A novel high-K SONOS type non-volatile memory and NMOS HfO₂ Vth instability studies for gate electrode and interface threatment effects

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dc.contributor.advisorKwong, Dim-Leeen
dc.creatorWang, Xuguangen
dc.date.accessioned2008-08-28T22:32:17Zen
dc.date.accessioned2017-05-11T22:16:56Z
dc.date.available2008-08-28T22:32:17Zen
dc.date.available2017-05-11T22:16:56Z
dc.date.issued2005en
dc.descriptiontexten
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifierb60824098en
dc.identifier.oclc68904532en
dc.identifier.urihttp://hdl.handle.net/2152/2089en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshComputer engineering--Data processingen
dc.subject.lcshScanning tunneling microscopyen
dc.subject.lcshMetal oxide semiconductorsen
dc.titleA novel high-K SONOS type non-volatile memory and NMOS HfO₂ Vth instability studies for gate electrode and interface threatment effectsen
dc.type.genreThesisen

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