Electrical and material characteristics of hafnium-based multi-metal high-k gate dielectrics for future scaled CMOS technology: physics, reliability, and process development

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dc.contributor.advisorLee, Jack Chung-Yeungen
dc.creatorRhee, Se Jongen
dc.date.accessioned2008-08-28T22:41:26Zen
dc.date.accessioned2017-05-11T22:17:06Z
dc.date.available2008-08-28T22:41:26Zen
dc.date.available2017-05-11T22:17:06Z
dc.date.issued2005en
dc.descriptiontexten
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifierb6112266xen
dc.identifier.oclc70960749en
dc.identifier.urihttp://hdl.handle.net/2152/2287en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshDielectricsen
dc.subject.lcshHafnium oxideen
dc.subject.lcshMetal oxide semiconductor field-effect transistorsen
dc.subject.lcshMetal oxide semiconductors, Complementaryen
dc.titleElectrical and material characteristics of hafnium-based multi-metal high-k gate dielectrics for future scaled CMOS technology: physics, reliability, and process developmenten
dc.type.genreThesisen

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