Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology

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dc.contributor.advisorLee, Jack Chung-Yeungen
dc.creatorKim, Young-Heeen
dc.date.accessioned2008-08-28T22:30:17Zen
dc.date.accessioned2017-05-11T22:16:55Z
dc.date.available2008-08-28T22:30:17Zen
dc.date.available2017-05-11T22:16:55Z
dc.date.issued2004en
dc.descriptiontexten
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifierb60809826en
dc.identifier.oclc68683292en
dc.identifier.proqst3143883en
dc.identifier.urihttp://hdl.handle.net/2152/2044en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshDielectricsen
dc.subject.lcshHafnium oxideen
dc.subject.lcshElectrodesen
dc.subject.lcshBreakdown (Electricity)en
dc.subject.lcshInterfaces (Physical sciences)en
dc.subject.lcshTantalum alloysen
dc.subject.lcshRuthenium compoundsen
dc.subject.lcshSilicon oxideen
dc.titleInterface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technologyen
dc.type.genreThesisen

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