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    Countering Aging Effects through Field Gate Sizing

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    Date
    2010-01-14
    Author
    Henrichson, Trenton D.
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    Abstract
    Transistor aging through negative bias temperature instability (NBTI) has become a major lifetime constraint in VLSI circuits. We propose a technique that uses antifuses to widen PMOS transistors later in a circuit?s life cycle to combat aging. Using HSPICE and 70nm BPTM process numbers, we simulated the technique on four circuits (a ring oscillator, a fan-out four circuit, an ISCAS c432 and c2670). Over the lifetime of the circuit, our simulations predict a 8.89% and a 13% improvement in power in the c432 and c2670 circuits respectively when compared to similarly performing traditional circuits.
    URI
    http://hdl.handle.net/1969.1/ETD-TAMU-2008-12-100
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