Browsing by Subject "Wavelet Transform"
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Item Fast Detection and Mitigation of Cascading Outages in the Power System(2012-02-14) Pang, ChengzongThis dissertation studies the causes and mechanism of power system cascading outages and proposes the improved interactive scheme between system-wide and local levels of monitoring and control to quickly detect, classify and mitigate the cascading outages in power system. A novel method for evaluating the vulnerability of individual components as well as the whole power system, which is named as weighted vulnerability analysis, is developed. Betweenness centrality is used to measure the importance of each bus and transmission line in the modeled power system network, which is in turn used to determine the weights for the weighted vulnerability index. It features fast reaction time and achieves higher accuracy when dealing with the cascading outage detection, classification and mitigation over the traditional methods. The overload problem due to power flow redistribution after one line tripped is a critical factor contributing to the cascading outages. A parallel corridor searching method is proposed to quickly identify the most vulnerable components after tripping a transmission line. The power system topology model can be simplified into state graph after searching the domains for each generator, the commons for each bus, and links between the commons. The parallel corridor will be determined by searching the links and commons in system topology graph for the given state of power system operation. During stressed operating state, either stable or unstable power swing may have impacts on distance relay judgment and lead to relay misoperation, which will result in the power system lines being tripped and as a consequence power system operating state becoming even more stressful. At the local level, an enhanced fault detection tool during power system swing is developed to reduce the chance of relay misoperation. Comprehensive simulation studies have been implemented by using the IEEE 39-bus and 118-bus test systems. The results are promising because: The results from weighted vulnerability analysis could provide better system situational awareness and accurate information about the disturbance; The results form parallel corridor search method could identify the most vulnerable lines after power re-distribution, which will give operator time to take remedial actions; The results from new travelling wave and wavelet transform based fault detection could reduce the impact of relay misoperation.Item In-situ temperature and thickness characterization for silicon wafers undergoing thermal annealing(Texas A&M University, 2004-11-15) Vedantham, VikramNano scale processing of IC chips has become the prime production technique as the microelectronic industry aims towards scaling down product dimensions while increasing accuracy and performance. Accurate control of temperature and a good monitoring mechanism for thickness of the deposition layers during epitaxial growth are critical parameters influencing a good yield. The two-fold objective of this thesis is to establish the feasibility of an alternative to the current pyrometric and ellipsometric techniques to simultaneously measure temperature and thickness during wafer processing. TAP-NDE is a non-contact, non-invasive, laser-based ultrasound technique that is employed in this study to contemporarily profile the thermal and spatial characteristics of the wafer. The Gabor wavelet transform allows the wave dispersion to be unraveled and the group velocity of individual frequency components to be extracted from the experimentally acquired time waveform. The thesis illustrates the formulation of a theoretical model that is used to identify the frequencies sensitive to temperature and thickness changes. The group velocity of the corresponding frequency components is determined and their corresponding changes with respect to temperature for different thickness are analytically modeled. TAP-NDE is then used to perform an experimental analysis on Silicon wafers of different thickness to determine the maximum possible resolution of TAP-NDE towards temperature sensitivity, and to demonstrate the ability to differentiate between wafers of different deposition layer thickness at temperatures up to 600?C. Temperature resolution is demonstrated for ?10?C resolution and for ?5?C resolution; while thickness differentiation is carried out with wafers carrying 4000? and 8000? of aluminum deposition layer. The experimental group velocities of a set of selected frequency components extracted using the Gabor Wavelet time-frequency analysis as compared to their corresponding theoretical group velocities show satisfactory agreement. As a result of this work, it is seen that TAP-NDE is a suitable tool to identify and characterize thickness and temperature changes simultaneously during thermal annealing that can replace the current need for separate characterization of these two important parameters in semiconductor manufacturing.