Browsing by Subject "UWB"
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Item An analog approach to interference suppression in ultra-wideband receivers(Texas A&M University, 2007-09-17) Fischer, Timothy W.Because of the huge bandwidth of Ultra-Wideband (UWB) systems, in-band narrowband interference may hinder receiver performance. In this dissertation, sources of potential narrowband interference that lie within the IEEE 802.15.3a UWB bandwidth are presented, and a solution is proposed. To combat interference in Multi-Band OFDM (MB-OFDM) UWB systems, an analog notch filter is designed to be included in the UWB receive chain. The architecture of the filter is based on feed-forward subtraction of the interference, and includes a Least Means Squared (LMS) tuning scheme to maximize attenuation. The filter uses the Fast Fourier Transform (FFT) result for interference detection and discrete center frequency tuning of the filter. It was fabricated in a 0.18 ????m process, and experimental results are provided. This is the first study of potential in-band interference sources for UWB. The proposed filter offers a practical means for ensuring reliable UWB communication in the presense of such interference. The Operational Transconductance Amplifier (OTA) is the predominant building block in the design of the notch filter. In many cases, OTAs must handle input signals with large common mode swings. A new scheme for achieving rail-to-rail input to an OTA is introduced. Constant gm is obtained by using tunable level shifters and a single differential pair. Feedback circuitry controls the level shifters in a manner that fixes the common mode input of the differential pair, resulting in consistent and stable operation for rail-to-rail inputs. As the new technique avoids using complimentary input differential pairs, this method overcomes problems such as Common Mode Rejection Ratio (CMRR) and Gain Bandwidth (GBW) product degradation that exist in many other designs. The circuit was fabricated in a 0.5????m process. The resulting differential pair had a constant transconductance that varied by only ????0.35% for rail-to-rail input common mode levels. The input common mode range extended well past the supply levels of ????1.5V, resulting in only ????1% fluctuation in gm for input common modes from -2V to 2V.Item Analog-to-digital interface design in wireless receivers(Texas A&M University, 2006-04-12) Xia, BoAs one of the major building blocks in a wireless receiver, the Analog-to-Digital Interface (ADI) provides link and transition between the analog Radio Frequency (RF) frontend and the baseband Digital Signal Processing (DSP) module. The rapid development of the radio technologies raises new design challenges for the receiver ADI implementation. Requirements, such as power consumption optimization, multi-standard compatibility, fast settling capability and wide signal bandwidth capacity, are often encountered in a low voltage ADI design environment. Previous research offers ADI design schemes that emphasize individual merit. A systematic ADI design methodology is, however, not suffciently studied. In this work, the ADI design for two receiver systems are employed as research vehicles to provide solutions for different ADI design issues. A zero-crossing demodulator ADI is designed in the 0.35??m CMOS technology for the Bluetooth receiver to provide fast settling. Architectural level modification improves the process variation and the Local Oscillation (LO) frequency offset immunity of the demodulator. A 16.2dB Signal-to-Noise Ratio (SNR) at 0.1% Bit Error Rate (BER) is achieved with less than 9mW power dissipation in the lab measurement. For ADI in the 802.11b/Bluetooth dual-mode receiver, a configurable time-interleaved pipeline Analog-to-Digital-Converter (ADC) structure is adopted to provide the required multi-standard compatibility. An online digital calibration scheme is also proposed to compensate process variation and mismatching. The prototype chip is fabricated in the 0.25??m BiCMOS technology. Experimentally, an SNR of 60dB and 64dB are obtained under the 802.11b and Bluetooth receiving modes, respectively. The power consumption of the ADI is 20.2mW under the 802.11b receiving mode and 14.8mW under the Bluetooth mode. In this dissertation, each step of the receiver ADI design procedure, from system level optimization to the transistor level implementation and lab measurement, is illustrated in detail. The observations are carefully studied to provide insight on receiver ADI design issues. The ADI design for the Ultra-Wide Band (UWB) receiver is also studied at system level. Potential ADI structure is proposed to satisfy the wide signal bandwidth and high speed requirement for future applications.Item Design and implementation of frequency synthesizers for 3-10 ghz mulitband ofdm uwb communication(2009-05-15) Mishra, ChinmayaThe allocation of frequency spectrum by the FCC for Ultra Wideband (UWB) communications in the 3.1-10.6 GHz has paved the path for very high data rate Gb/s wireless communications. Frequency synthesis in these communication systems involves great challenges such as high frequency and wideband operation in addition to stringent requirements on frequency hopping time and coexistence with other wireless standards. This research proposes frequency generation schemes for such radio systems and their integrated implementations in silicon based technologies. Special emphasis is placed on efficient frequency planning and other system level considerations for building compact and practical systems for carrier frequency generation in an integrated UWB radio. This work proposes a frequency band plan for multiband OFDM based UWB radios in the 3.1-10.6 GHz range. Based on this frequency plan, two 11-band frequency synthesizers are designed, implemented and tested making them one of the first frequency synthesizers for UWB covering 78% of the licensed spectrum. The circuits are implemented in 0.25?m SiGe BiCMOS and the architectures are based on a single VCO at a fixed frequency followed by an array of dividers, multiplexers and single sideband (SSB) mixers to generate the 11 required bands in quadrature with fast hopping in much less than 9.5 ns. One of the synthesizers is integrated and tested as part of a 3-10 GHz packaged receiver. It draws 80 mA current from a 2.5 V supply and occupies an area of 2.25 mm2. Finally, an architecture for a UWB synthesizer is proposed that is based on a single multiband quadrature VCO, a programmable integer divider with 50% duty cycle and a single sideband mixer. A frequency band plan is proposed that greatly relaxes the tuning range requirement of the multiband VCO and leads to a very digitally intensive architecture for wideband frequency synthesis suitable for implementation in deep submicron CMOS processes. A design in 130nm CMOS occupies less than 1 mm2 while consuming 90 mW. This architecture provides an efficient solution in terms of area and power consumption with very low complexity.Item Design of a 3.1-4.8 GHZ RF front-end for an ultra wideband receiver(Texas A&M University, 2006-08-16) Sharma, PushkarIEEE 802.15 High Rate Alternative PHY task group (TG3a) is working to define a protocol for Wireless Personal Area Networks (WPANs) which makes it possible to attain data rates of greater than 110Mbps. Ultra Wideband (UWB) technology utilizing frequency band of 3.168 GHz ? 10.6 GHz is an emerging solution to this with data rates of 110, 200 and 480 Mbps. Initially, UWB mode I devices using only 3.168 GHz ? 4.752 GHz have been proposed. Low Noise Amplifier (LNA) and I-Q mixers are key components constituting the RF front-end. Performance of these blocks is very critical to the overall performance of the receiver. In general, main considerations for the LNA are low noise, 50 broadband input matching, high gain with maximum flatness and good linearity. For the mixers, it is essential to attain low flicker noise performance coupled with good conversion gain. Proposed LNA architecture is a derivative of inductive source degenerated topology. Broadband matching at the LNA output is achieved using LC band-pass filter. To obtain high gain with maximum flatness, an LC band-pass filter is used at its output. Proposed LNA achieved a gain of 15dB, noise figure of less than 2.6dB and IIP3 of more than -7dBm. Mixer is a modified version of double balanced Gilbert cell topology where both I and Q channel mixers are merged together. Frequency response of each sub-band is matched by using an additional inductor, which further improves the noise figure and conversion gain. Current bleeding scheme is used to further reduce the low frequency noise. Mixer achieves average conversion gain of 14.5dB, IIP3 more than 6dBm and Double Side Band (DSB) noise figure less than 9dB. Maximum variation in conversion gain is desired to be less than 1dB. Both LNA and mixers are designed to be fabricated in TSMC 0.18??m CMOS technology.Item Design of a variable gain amplifier for an ultrawideband receiver(Texas A&M University, 2005-11-01) Krishnanji, SivasankariA fully differential CMOS variable gain amplifier (VGA) has been designed for an ultra-wideband receiver. The VGA comprises of two variable gain stages followed by a post amplifier stage. The interface between the digital control block and the analog VGA is formed by a digital-to-analog converter and an exponential voltage generator. The gain of the VGA varies dB-linearly from 0 to 52 dB with respect to the control voltage. The VGA is operated in open loop with a bandwidth greater than 500 MHz throughout the gain range to cater to the requirements of the ultra-wideband system. The noise-to-power ratio of the VGA is -23.9 dB for 1Vp-p differential input signal in the low gain setting, and the equivalent input referred noise is 1.01 V2 for the high gain setting. All three stages use common mode feedback to fix and stabilize the output DC levels at a particular voltage depending on the input common-mode requirement of the following stage. DC offset cancellation has also been incorporated to minimize the input referred DC offset caused by systematic and random mismatches in the circuit. Compensation schemes to minimize the effects of temperature, supply and process variations have been included in the design. The circuit has been designed in 0.18??m CMOS technology, and the post layout simulations are in good agreement with the schematic simulations.Item Design of CMOS integrated frequency synthesizers for ultra-wideband wireless communications systems(2009-05-15) Tong, HaitaoUltra?wide band (UWB) system is a breakthrough in wireless communication, as it provides data rate one order higher than existing ones. This dissertation focuses on the design of CMOS integrated frequency synthesizer and its building blocks used in UWB system. A mixer?based frequency synthesizer architecture is proposed to satisfy the agile frequency hopping requirement, which is no more than 9.5 ns, three orders faster than conventional phase?locked loop (PLL)?based synthesizers. Harmonic cancela?tion technique is extended and applied to suppress the undesired harmonic mixing components. Simulation shows that sidebands at 2.4 GHz and 5 GHz are below 36 dBc from carrier. The frequency synthesizer contains a novel quadrature VCO based on the capacitive source degeneration structure. The QVCO tackles the jeopardous ambiguity of the oscillation frequency in conventional QVCOs. Measurement shows that the 5?GHz CSD?QVCO in 0.18 ?m CMOS technology draws 5.2 mA current from a 1.2 V power supply. Its phase noise is ?120 dBc at 3 MHz o?set. Compared with existing phase shift LC QVCOs, the proposed CSD?QVCO presents better phase noise and power e?ciency. Finally, a novel injection locking frequency divider (ILFD) is presented. Im?plemented with three stages in 0.18 ?m CMOS technology, the ILFD draws 3?mA current from a 1.8?V power supply. It achieves multiple large division ratios as 6, 12, and 18 with all locking ranges greater than 1.7 GHz and injection frequency up to 11 GHz. Compared with other published ILFDs, the proposed ILFD achieves the largest division ratio with satisfactory locking range.Item High performance building blocks for wireless receiver: multi-stage amplifiers and low noise amplifiers(2009-05-15) Fan, XiaohuaDifferent wireless communication systems utilizing different standards and for multiple applications have penetrated the normal people's life, such as Cell phone, Wireless LAN, Bluetooth, Ultra wideband (UWB) and WiMAX systems. The wireless receiver normally serves as the primary part of the system, which heavily influences the system performance. This research concentrates on the designs of several important blocks of the receiver; multi-stage amplifier and low noise amplifier. Two novel multi-stage amplifier typologies are proposed to improve the bandwidth and reduce the silicon area for the application where a large capacitive load exists. They were designed using AMI 0.5 m ? CMOS technology. The simulation and measurement results show they have the best Figure-of-Merits (FOMs) in terms of small signal and large signal performances, with 4.6MHz and 9MHz bandwidth while consuming 0.38mW and 0.4mW power from a 2V power supply. Two Low Noise Amplifiers (LNAs) are proposed, with one designed for narrowband application and the other for UWB application. A noise reduction technique is proposed for the differential cascode Common Source LNA (CS-LNA), which reduces the LNA Noise Figure (NF), increases the LNA gain, and improves the LNA linearity. At the same time, a novel Common Gate LNA (CG-LNA) is proposed for UWB application, which has better linearity, lower power consumption, and reasonable noise performance. Finally a novel practical current injection built-in-test (BIT) technique is proposed for the RF Front-end circuits. If the off-chip component Lg and Rs values are well controlled, the proposed technique can estimate the voltage gain of the LNA with less than 1dB (8%) error.Item Multi-band OFDM UWB receiver with narrowband interference suppression(2009-05-15) Kelleci, BurakA multi band orthogonal frequency division multiplexing (MB-OFDM) compatible ultra wideband (UWB) receiver with narrowband interference (NBI) suppression capability is presented. The average transmit power of UWB system is limited to -41.3 dBm/MHz in order to not interfere existing narrowband systems. Moreover, it must operate even in the presence of unintentional radiation of FCC Class-B compatible devices. If this unintentional radiation resides in the UWB band, it can jam the communication. Since removing the interference in digital domain requires higher dynamic range of analog front-end than removing it in analog domain, a programmable analog notch filter is used to relax the receiver requirements in the presence of NBI. The baseband filter is placed before the variable gain amplifier (VGA) in order to reduce the signal swing at the VGA input. The frequency hopping period of MB-OFDM puts a lower limit on the settling time of the filter, which is inverse proportional to notch bandwidth. However, notch bandwidth should be low enough not to attenuate the adjacent OFDM tones. Since these requirements are contradictory, optimization is needed to maximize overall performance. Two different NBI suppression schemes are tested. In the first scheme, the notch filter is operating for all sub-bands. In the second scheme, the notch filter is turned on during the sub-band affected by NBI. Simulation results indicate that the UWB system with the first and the second suppression schemes can handle up to 6 dB and 14 dB more NBI power, respectively. The results of this work are not limited to MB-OFDM UWB system, and can be applied to other frequency hopping systems.Item Passive and active circuits in cmos technology for rf, microwave and millimeter wave applications(2009-05-15) Chirala, Mohan KrishnaThe permeation of CMOS technology to radio frequencies and beyond has fuelled an urgent need for a diverse array of passive and active circuits that address the challenges of rapidly emerging wireless applications. While traditional analog based design approaches satisfy some applications, the stringent requirements of newly emerging applications cannot necessarily be addressed by existing design ideas and compel designers to pursue alternatives. One such alternative, an amalgamation of microwave and analog design techniques, is pursued in this work. A number of passive and active circuits have been designed using a combination of microwave and analog design techniques. For passives, the most crucial challenge to their CMOS implementation is identified as their large dimensions that are not compatible with CMOS technology. To address this issue, several design techniques ? including multi-layered design and slow wave structures ? are proposed and demonstrated through experimental results after being suitably tailored for CMOS technology. A number of novel passive structures - including a compact 10 GHz hairpin resonator, a broadband, low loss 25-35 GHz Lange coupler, a 25-35 GHz thin film microstrip (TFMS) ring hybrid, an array of 0.8 nH and 0.4 nH multi-layered high self resonant frequency (SRF) inductors are proposed, designed and experimentally verified. A number of active circuits are also designed and notable experimental results are presented. These include 3-10 GHz and DC-20 GHz distributed low noise amplifiers (LNA), a dual wideband Low noise amplifier and 15 GHz distributed voltage controlled oscillators (DVCO). Distributed amplifiers are identified as particularly effective in the development of wideband receiver front end sub-systems due to their gain flatness, excellent matching and high linearity. The most important challenge to the implementation of distributed amplifiers in CMOS RFICs is identified as the issue of their miniaturization. This problem is solved by using integrated multi-layered inductors instead of transmission lines to achieve over 90% size compression compared to earlier CMOS implementations. Finally, a dual wideband receiver front end sub-system is designed employing the miniaturized distributed amplifier with resonant loads and integrated with a double balanced Gilbert cell mixer to perform dual band operation. The receiver front end measured results show 15 dB conversion gain, and a 1-dB compression point of -4.1 dBm in the centre of band 1 (from 3.1 to 5.0 GHz) and -5.2 dBm in the centre of band 2 (from 5.8 to 8 GHz) with input return loss less than 10 dB throughout the two bands of operation.Item Radio frequency circuits for wireless receiver front-ends(Texas A&M University, 2005-11-01) Xin, ChunyuThe beginning of the 21st century sees great development and demands on wireless communication technologies. Wireless technologies, either based on a cable replacement or on a networked environment, penetrate our daily life more rapidly than ever. Low operational power, low cost, small form factor, and function diversity are the crucial requirements for a successful wireless product. The receiver??s front-end circuits play an important role in faithfully recovering the information transmitted through the wireless channel. Bluetooth is a short-range cable replacement wireless technology. A Bluetooth receiver architecture was proposed and designed using a pure CMOS process. The front-end of the receiver consists of a low noise amplifier (LNA) and mixer. The intermediate frequency was chosen to be 2MHz to save battery power and alleviate the low frequency noise problem. A conventional LNA architecture was used for reliability. The mixer is a modified Gilbert-cell using the current bleeding technique to further reduce the low frequency noise. The front-end draws 10 mA current from a 3 V power supply, has a 8.5 dB noise figure, and a voltage gain of 25 dB and -9 dBm IIP3. A front-end for dual-mode receiver is also designed to explore the capability of a multi-standard application. The two standards are IEEE 802.11b and Bluetooth. They work together making the wireless experience more exciting. The front-end is designed using BiCMOS technology and incorporating a direct conversion receiver architecture. A number of circuit techniques are used in the front-end design to achieve optimal results. It consumes 13.6 mA from a 2.5 V power supply with a 5.5 dB noise figure, 33 dB voltage gain and -13 dBm IIP3. Besides the system level contributions, intensive studies were carried out on the development of quality LNA circuits. Based on the multi-gated LNA structure, a CMOS LNA structure using bipolar transistors to provide linearization is proposed. This LNA configuration can achieve comparable linearity to its CMOS multi-gated counterpart and work at a higher frequency with less power consumption. A LNA using an on-chip transformer source degeneration is proposed to realize input impedance matching. The possibility of a dual-band cellular application is studied. Finally, a study on ultra-wide band (UWB) LNA implementation is performed to explore the possibility and capability of CMOS technology on the latest UWB standard for multimedia applications.Item RF CMOS UWB transmitter and receiver front-end design(2009-05-15) Miao, MengThe low-cost low-power complementary metal-oxide semiconductor (CMOS) ultra wideband (UWB) transmitter and receiver front-ends based on impulse technology were developed. The CMOS UWB pulse generator with frequency-band tuning capability was developed, which can generate both impulse and monocycle pulse signals with variable pulse durations. The pulse generator integrates a tuning delay circuit, a square-wave generator, an impulse-forming circuit, and a pulse-shaping circuit in a single chip. When integrated with the binary phase shift keying (BPSK) modulator, the transmitter front-end can generate a positive impulse with 0.8 V, negative impulse with 0.7 V, as well as the positive/negative monocycle pulse with 0.6 ? 0.8 V, all with tunable pulse durations. The UWB receiver front-end including the template pulse generator, low noise amplifier (LNA), and multiplier was developed. The cascoded common-source inductively degenerated LNA, with extended ultra-wideband ladder matching network, as well as shunt-peaking topology, was selected to form the impulse-type UWB LNA. The structure-optimized and patterned ground shield (PGS) inductors were also studied and used in LNA design to improve the LNA performance. The maximum gain of 12.4 dB was achieved over the band. For the 3-dB bandwidth, 2.6 ? 9.8 GHz was achieved. The average noise figure of 5.8 dB was achieved over the entire UWB band of 3.1-10.6 GHz. The UWB multiplier based on the transconductor multiplier structure was investigated, with the shunt-peaking topology applied to achieve the pole-zero cancellation and extend the multiplier bandwidth from 2 GHz to 10 GHz. A low-cost, compact, easy-to-manufacture coplanar UWB antenna was developed that is omni-directional, radiation-efficient and has a stable UWB response. It covers the entire UWB frequency range of 3.1 ? 10.6 GHz, with the return loss better than 18-dB. This novel uniplanar antenna was integrated with the developed CMOS tunable pulse generator to form the UWB transmitter front-end module. This UWB module can transmit the monocycle pulses and the signals having shape similar to the first derivative of the monocycle pulses, all with the tunable pulse durations. The proposed UWB front-ends have the potential application in short-range communication, GPR, and short-range detections.Item System-level design and RF front-end implementation for a 3-10ghz multiband-ofdm ultrawideband receiver and built-in testing techniques for analog and rf integrated circuits(Texas A&M University, 2007-09-17) Valdes Garcia, AlbertoThis work consists of two main parts: a) Design of a 3-10GHz UltraWideBand (UWB) Receiver and b) Built-In Testing Techniques (BIT) for Analog and RF circuits. The MultiBand OFDM (MB-OFDM) proposal for UWB communications has received significant attention for the implementation of very high data rate (up to 480Mb/s) wireless devices. A wideband LNA with a tunable notch filter, a downconversion quadrature mixer, and the overall radio system-level design are proposed for an 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB implemented in a 0.25mm BiCMOS process. The packaged IC includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The receiver IC mounted on a FR-4 substrate provides a maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply. Two BIT techniques for analog and RF circuits are developed. The goal is to reduce the test cost by reducing the use of analog instrumentation. An integrated frequency response characterization system with a digital interface is proposed to test the magnitude and phase responses at different nodes of an analog circuit. A complete prototype in CMOS 0.35mm technology employs only 0.3mm2 of area. Its operation is demonstrated by performing frequency response measurements in a range of 1 to 130MHz on 2 analog filters integrated on the same chip. A very compact CMOS RF RMS Detector and a methodology for its use in the built-in measurement of the gain and 1dB compression point of RF circuits are proposed to address the problem of on-chip testing at RF frequencies. The proposed device generates a DC voltage proportional to the RMS voltage amplitude of an RF signal. A design in CMOS 0.35mm technology presents and input capacitance <15fF and occupies and area of 0.03mm2. The application of these two techniques in combination with a loop-back test architecture significantly enhances the testability of a wireless transceiver system.