Browsing by Subject "Parasitic Extraction"
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Item A PLL Design Based on a Standing Wave Resonant Oscillator(2011-10-21) Karkala, VinayIn this thesis, we present a new continuously variable high frequency standing wave oscillator and demonstrate its use in generating the phase locked clock signal of a digital IC. The ring based standing wave resonant oscillator is implemented with a plurality of wires connected in a mobius configuration, with a cross coupled inverter pair connected across the wires. The oscillation frequency can be modulated by coarse and fine tuning. Coarse modification is achieved by altering the number of wires in the ring that participate in the oscillation, by driving a digital word to a set of passgates which are connected to each wire in the ring. Fine tuning of the oscillation frequency is achieved by varying the body bias voltage of both the PMOS transistors in the cross coupled inverter pair which sustains the oscillations in the resonant ring. We validated our PLL design in a 90nm process technology. 3D parasitic RLCs for our oscillator ring were extracted with skin effect accounted for. Our PLL provides a frequency locking range from 6 GHz to 9 GHz, with a center frequency of 7.5 GHz. The oscillator alone consumes about 25 mW of power, and the complete PLL consumes a power of 28.5 mW. The observed jitter of the PLL is 2.56 percent. These numbers are significant improvements over the prior art in standing wave based PLLs.Item Analysis and Modeling of Parasitic Capacitances in Advanced Nanoscale Devices(2012-07-16) Bekal, PrasannaIn order to correctly perform circuit simulation, it is crucial that parasitic capacitances near devices are accurately extracted and are consistent with the SPICE models. Although 3D device simulation can be used to extract such parasitics, it is expensive and does not consider the effects of nearby interconnect and devices in a layout. Conventional rule-based layout parasitic extraction (LPE) tools which are used for interconnect extraction are inaccurate in modeling 3D effects near devices. In this thesis, we propose a methodology which combines 3D field solver based extraction with the ability to exclude specific parasitics from among the parameters in the SPICE model. We use this methodology to extract parasitics due to fringing fields and sidewall capacitances in MOSFETs, bipolar transistors and FinFETs in advanced process nodes. We analyze the importance of considering layout and process variables in device extraction by comparing with standard SPICE models. The results are validated by circuit simulation using predictive technology models and test chips. We also demonstrate the versatility of this flow by modeling the capacitance contributions of the raised gate profile in nanoscale FinFETs.