Browsing by Subject "LNA"
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Item A Highly Linear Broadband LNA(2010-10-12) Park, Joung WonIn this work, a highly linear broadband Low Noise Amplifier (LNA) is presented. The linearity issue in broadband Radio Frequency (RF) front-end is introduced, followed by an analysis of the specifications and requirements of a broadband LNA through consideration of broadband, multi-standard front-end design. Metal-Oxide- Semiconductor Field-Effect Transistor (MOSFET) non-linearity characteristics cause linearity problems in the RF front-end system. To solve this problem, feedback and the Derivative Superposition Method linearized MOSFET. In this work, novel linearization approaches such as the constant current biasing and the Derivative Superposition Method using a triode region transistor improve linearization stability against Process, Supply Voltage, and Temperature (PVT) variations and increase high power input capability. After analyzing and designing a resistive feedback LNA, novel linearization methods were applied. A highly linear broadband LNA is designed and simulated in 65nm CMOS technology. Simulation results including PVT variation and the Monte Carlo simulation are presented. We obtained -10dB S11, 9.77dB S21, and 4.63dB Noise Figure with IIP3 of 19.18dBm for the designed LNA.Item Design of a 3.1-4.8 GHZ RF front-end for an ultra wideband receiver(Texas A&M University, 2006-08-16) Sharma, PushkarIEEE 802.15 High Rate Alternative PHY task group (TG3a) is working to define a protocol for Wireless Personal Area Networks (WPANs) which makes it possible to attain data rates of greater than 110Mbps. Ultra Wideband (UWB) technology utilizing frequency band of 3.168 GHz ? 10.6 GHz is an emerging solution to this with data rates of 110, 200 and 480 Mbps. Initially, UWB mode I devices using only 3.168 GHz ? 4.752 GHz have been proposed. Low Noise Amplifier (LNA) and I-Q mixers are key components constituting the RF front-end. Performance of these blocks is very critical to the overall performance of the receiver. In general, main considerations for the LNA are low noise, 50 broadband input matching, high gain with maximum flatness and good linearity. For the mixers, it is essential to attain low flicker noise performance coupled with good conversion gain. Proposed LNA architecture is a derivative of inductive source degenerated topology. Broadband matching at the LNA output is achieved using LC band-pass filter. To obtain high gain with maximum flatness, an LC band-pass filter is used at its output. Proposed LNA achieved a gain of 15dB, noise figure of less than 2.6dB and IIP3 of more than -7dBm. Mixer is a modified version of double balanced Gilbert cell topology where both I and Q channel mixers are merged together. Frequency response of each sub-band is matched by using an additional inductor, which further improves the noise figure and conversion gain. Current bleeding scheme is used to further reduce the low frequency noise. Mixer achieves average conversion gain of 14.5dB, IIP3 more than 6dBm and Double Side Band (DSB) noise figure less than 9dB. Maximum variation in conversion gain is desired to be less than 1dB. Both LNA and mixers are designed to be fabricated in TSMC 0.18??m CMOS technology.Item High frequency continuous-time circuits and built-in-self-test using CMOS RMS detector(Texas A&M University, 2007-04-25) Venkatasubramanian, RadhikaThe expanding wireless market has resulted in complex integrated transceivers that involve RF, analog and mixed-signal circuits, resulting in expensive and complicated testing. The most important challenges that test engineering faces today are (1) providing a fast and accurate fault-diagnosis and performance characterization so as to accelerate the time-to-market and (2) providing an inexpensive test strategy that can be integrated with the design so as to aid the high-volume manufacturing process. The first part of the research focuses on the design of an RMS detector for built-in-self-test (BIST) of an RF integrated transceiver that can directly provide information at various test points in the design. A cascode low noise amplifier (LNA) has been chosen as the device under test (DUT). A compact (< 0.031 mm2) RF RMS detector with negligible input capacitance (< 13 fF) has been implemented in 0.35 ????m CMOS technology along with the DUT. Experimental results are currently being assimilated and compared with the simulation results. Frequency limitations were encountered during the testing process due to unexpected increase in the value of the N-well resistors. All other problems faced during the testing, as well as the results obtained so far, are presented in this thesis. In the second part of the research, the use of the RMS detector for BIST has been extended to a continuous-time high-frequency boost-filter. The proposed HF RMS detector has been implemented along with a 24 dB 350 MHz boost filter as the DUT on 0.35 ????m CMOS technology. The HF RMS detector occupies 0.07 mm2 and has an input capacitance of 7 fF. The HF RMS detector has a dynamic range greater than 24 dB starting from -38 dBm of input power. The bandwidth and boost of the filter have been accurately estimated in simulation using the HF RMS detector. The sensitivity of an intermediate band pass node of the filter has also been monitored to predict the filter's sensitivity to Q errors. The final part of the research describes the design of a single-ended to differential converter for use in a broadband transceiver operating from 50-850 MHz. This circuit is used as the second stage in the transceiver after the LNA. The design has been simulated on a 0.35 um CMOS process and has a power consumption of 13.5 mW and less than 8 dB of noise figure over the entire band. It is capable of driving a 500fF load with less than 1dB of gain ripple over the entire band (50-850 MHz).Item High performance building blocks for wireless receiver: multi-stage amplifiers and low noise amplifiers(2009-05-15) Fan, XiaohuaDifferent wireless communication systems utilizing different standards and for multiple applications have penetrated the normal people's life, such as Cell phone, Wireless LAN, Bluetooth, Ultra wideband (UWB) and WiMAX systems. The wireless receiver normally serves as the primary part of the system, which heavily influences the system performance. This research concentrates on the designs of several important blocks of the receiver; multi-stage amplifier and low noise amplifier. Two novel multi-stage amplifier typologies are proposed to improve the bandwidth and reduce the silicon area for the application where a large capacitive load exists. They were designed using AMI 0.5 m ? CMOS technology. The simulation and measurement results show they have the best Figure-of-Merits (FOMs) in terms of small signal and large signal performances, with 4.6MHz and 9MHz bandwidth while consuming 0.38mW and 0.4mW power from a 2V power supply. Two Low Noise Amplifiers (LNAs) are proposed, with one designed for narrowband application and the other for UWB application. A noise reduction technique is proposed for the differential cascode Common Source LNA (CS-LNA), which reduces the LNA Noise Figure (NF), increases the LNA gain, and improves the LNA linearity. At the same time, a novel Common Gate LNA (CG-LNA) is proposed for UWB application, which has better linearity, lower power consumption, and reasonable noise performance. Finally a novel practical current injection built-in-test (BIT) technique is proposed for the RF Front-end circuits. If the off-chip component Lg and Rs values are well controlled, the proposed technique can estimate the voltage gain of the LNA with less than 1dB (8%) error.Item High-Isolation Low-Power Active Quasi-Circulator for 44GHz Transceiver with Power and Noise Optimization in 0.18 Micrometer BICMOS(2014-12-03) Meng, FangyuCirculator is an important directional component in RF, microwave and millimeter wave communication front ends for certain communications, which requires transmitting and receiving signal simultaneously in the same band without switching of antenna from transmitter to receiver. As modern trend of wireless communication, conventional ferrite circulator is huge, bulky and heavy to be integrated with analog and digital baseband processing circuits. Active circulators provide a compact high isolation solution for low power application with smaller size and less cost with compatibility with modern IC. Previous works are majorly working at low frequency and paid little attention to power and noise requirement of active quasi-circulator working at the front end of a transceiver. A BiCMOS active quasi-circulator at 44GHz is designed in 0.18 ?m process to provide high isolation low cost solution, which is comprised of in-phase divider and out-of-phase active combiner, with noise and power optimization. Moreover, techniques employed to improve isolation such as high Common mode rejection ratio(CMRR) balun design, common mode feedback, and novel method of power splitting and noise optimization, impedance matching scheme are discussed. High isolation of cascode structure is analyzed and major tradeoffs among characteristics are investigated, such as: gain and transmission-reception isolation; output impedance, matching and noise; linearity, power and efficiency. The circulator operates around 44 GHz with 3dB bandwidth of 4.53GHz, achieves maximum 2.897dBm input and 2.32dBm output power. Noise Figure (NF) is 10.62dB for reception path, only 0.03dB higher than NFmin. Linearity is reasonable for both in-phase divider and out-of-phase active combiner. OIP3 of in-phase divider is 8.15dBm, IIP3 is 4.48dBm, P1dB,in is -5.97dBm. OIP3 of out-of-phase active combiner is 5.18 dBm, IIP3 is 3.85dBm, P1dB, in is -2.79dBm. All the isolations better than -37 dB are achieved and forward gains better than 4 dB are achieved with power consumption 56.83mW. Large signal TX-RX isolation is 51.837dB. The circuit takes merely 1.415mm*1.014mm area. This active quasi-circulator offers a low cost substitute solution for circulator in low power applications.Item Highly linear low noise amplifier(Texas A&M University, 2007-09-17) Ganesan, SivakumarThe CDMA standard operating over the wireless environment along with various other wireless standards places stringent specifications on the RF Front end. Due to possible large interference signal tones at the receiver end along with the carrier, the Low Noise Amplifier (LNA) is expected to provide high linearity, thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal. The research focuses on designing a novel LNA which achieves high linearity without sacrificing any of its specifications of gain and Noise Figure (NF). The novel LNA proposed achieves high linearity by canceling the IM3 tones in the main transistor in both magnitude and phase using the IM3 tones generated by an auxiliary transistor. Extensive Volterra series analysis using the harmonic input method has been performed to prove the concept of third harmonic cancellation and a design methodology has been proposed. The LNA has been designed to operate at 900MHz in TSMC 0.35um CMOS technology. The LNA has been experimentally verified for its functionality. Linearity is usually measured in terms of IIP3 and the LNA has an IIP3 of +21dBm, with a gain of 11 dB, NF of 3.1 dB and power consumption of 22.5 mW.Item Linearity and Noise Improvement Techniques Employing Low Power in Analog and RF Circuits and Systems(2012-12-07) Abdel Ghany, EhabThe implementation of highly integrated multi-bands and multi-standards reconfigurable radio transceivers is one of the great challenges in the area of integrated circuit technology today. In addition the rapid market growth and high quality demands that require cheaper and smaller solutions, the technical requirements for the transceiver function of a typical wireless device are considerably multi-dimensional. The major key performance metrics facing RFIC designers are power dissipation, speed, noise, linearity, gain, and efficiency. Beside the difficulty of the circuit design due to the trade-offs and correlations that exist between these parameters, the situation becomes more and more challenging when dealing with multi-standard radio systems on a single chip and applications with different requirements on the radio software and hardware aiming at highly flexible dynamic spectrum access. In this dissertation, different solutions are proposed to improve the linearity, reduce the noise and power consumption in analog and RF circuits and systems. A system level design digital approach is proposed to compensate the harmonic distortion components produced by transmitter circuits? nonlinearities. The approach relies on polyphase multipath scheme uses digital baseband phase rotation pre-distortion aiming at increasing harmonic cancellation and power consumption reduction over other reported techniques. New low power design techniques to enhance the noise and linearity of the receiver front-end LNA are also presented. The two proposed LNAs are fully differential and have a common-gate capacitive cross-coupled topology. The proposed LNAs avoids the use of bulky inductors that leads to area and cost saving. Prototypes are implemented in IBM 90 nm CMOS technology for the two LNAs. The first LNA covers the frequency range of 100 MHz to 1.77 GHz consuming 2.8 mW from a 2 V supply. Measurements show a gain of 23 dB with a 3-dB bandwidth of 1.76 GHz. The minimum NF is 1.85 dB while the input return loss is greater than 10 dB across the entire band. The second LNA covers the frequency range of 100 MHz to 1.6 GHz. A 6 dBm third-order input intercept point, IIP3, is measured at the maximum gain frequency. The core consumes low power of 1.55 mW using a 1.8 V supply. The measured voltage gain is 15.5 dB with a 3-dB bandwidth of 1.6 GHz. The LNA has a minimum NF of 3 dB across the whole band while achieving an input return loss greater than 12 dB. Finally, A CMOS single supply operational transconductance amplifier (OTA) is reported. It has high power supply rejection capabilities over the entire gain bandwidth (GBW). The OTA is fabricated on the AMI 0.5 um CMOS process. Measurements show power supply rejection ratio (PSRR) of 120 dB till 10 KHz. At 10 MHz, PSRR is 40 dB. The high performance PSRR is achieved using a high impedance current source and two noise reduction techniques. The OTA offers a very low current consumption of 25 uA from a 3.3 V supply.Item Passive and active circuits in cmos technology for rf, microwave and millimeter wave applications(2009-05-15) Chirala, Mohan KrishnaThe permeation of CMOS technology to radio frequencies and beyond has fuelled an urgent need for a diverse array of passive and active circuits that address the challenges of rapidly emerging wireless applications. While traditional analog based design approaches satisfy some applications, the stringent requirements of newly emerging applications cannot necessarily be addressed by existing design ideas and compel designers to pursue alternatives. One such alternative, an amalgamation of microwave and analog design techniques, is pursued in this work. A number of passive and active circuits have been designed using a combination of microwave and analog design techniques. For passives, the most crucial challenge to their CMOS implementation is identified as their large dimensions that are not compatible with CMOS technology. To address this issue, several design techniques ? including multi-layered design and slow wave structures ? are proposed and demonstrated through experimental results after being suitably tailored for CMOS technology. A number of novel passive structures - including a compact 10 GHz hairpin resonator, a broadband, low loss 25-35 GHz Lange coupler, a 25-35 GHz thin film microstrip (TFMS) ring hybrid, an array of 0.8 nH and 0.4 nH multi-layered high self resonant frequency (SRF) inductors are proposed, designed and experimentally verified. A number of active circuits are also designed and notable experimental results are presented. These include 3-10 GHz and DC-20 GHz distributed low noise amplifiers (LNA), a dual wideband Low noise amplifier and 15 GHz distributed voltage controlled oscillators (DVCO). Distributed amplifiers are identified as particularly effective in the development of wideband receiver front end sub-systems due to their gain flatness, excellent matching and high linearity. The most important challenge to the implementation of distributed amplifiers in CMOS RFICs is identified as the issue of their miniaturization. This problem is solved by using integrated multi-layered inductors instead of transmission lines to achieve over 90% size compression compared to earlier CMOS implementations. Finally, a dual wideband receiver front end sub-system is designed employing the miniaturized distributed amplifier with resonant loads and integrated with a double balanced Gilbert cell mixer to perform dual band operation. The receiver front end measured results show 15 dB conversion gain, and a 1-dB compression point of -4.1 dBm in the centre of band 1 (from 3.1 to 5.0 GHz) and -5.2 dBm in the centre of band 2 (from 5.8 to 8 GHz) with input return loss less than 10 dB throughout the two bands of operation.Item Radio frequency circuits for wireless receiver front-ends(Texas A&M University, 2005-11-01) Xin, ChunyuThe beginning of the 21st century sees great development and demands on wireless communication technologies. Wireless technologies, either based on a cable replacement or on a networked environment, penetrate our daily life more rapidly than ever. Low operational power, low cost, small form factor, and function diversity are the crucial requirements for a successful wireless product. The receiver??s front-end circuits play an important role in faithfully recovering the information transmitted through the wireless channel. Bluetooth is a short-range cable replacement wireless technology. A Bluetooth receiver architecture was proposed and designed using a pure CMOS process. The front-end of the receiver consists of a low noise amplifier (LNA) and mixer. The intermediate frequency was chosen to be 2MHz to save battery power and alleviate the low frequency noise problem. A conventional LNA architecture was used for reliability. The mixer is a modified Gilbert-cell using the current bleeding technique to further reduce the low frequency noise. The front-end draws 10 mA current from a 3 V power supply, has a 8.5 dB noise figure, and a voltage gain of 25 dB and -9 dBm IIP3. A front-end for dual-mode receiver is also designed to explore the capability of a multi-standard application. The two standards are IEEE 802.11b and Bluetooth. They work together making the wireless experience more exciting. The front-end is designed using BiCMOS technology and incorporating a direct conversion receiver architecture. A number of circuit techniques are used in the front-end design to achieve optimal results. It consumes 13.6 mA from a 2.5 V power supply with a 5.5 dB noise figure, 33 dB voltage gain and -13 dBm IIP3. Besides the system level contributions, intensive studies were carried out on the development of quality LNA circuits. Based on the multi-gated LNA structure, a CMOS LNA structure using bipolar transistors to provide linearization is proposed. This LNA configuration can achieve comparable linearity to its CMOS multi-gated counterpart and work at a higher frequency with less power consumption. A LNA using an on-chip transformer source degeneration is proposed to realize input impedance matching. The possibility of a dual-band cellular application is studied. Finally, a study on ultra-wide band (UWB) LNA implementation is performed to explore the possibility and capability of CMOS technology on the latest UWB standard for multimedia applications.Item Ultra Low Power IEEE 802.15.4/ZIGBEE Compliant Transceiver(2011-02-22) Hussien, Faisal A.Low power wireless communications is the most demanding request among all wireless users. A battery life that can survive for years without being replaced, makes it realistic to implement many applications where the battery is unreachable (e.g. concrete walls) or expensive to change (e.g underground applications). IEEE 802.15.4/ZIGBEE standard is published to cover low power low cost applications, where the battery life can last for years, because of the 1% duty cycle of operation. A fully integrated 2.4GHz IEEE802.15.4 Compliant transceiver suitable for low power, low cost ZIGBEE applications is implemented. Direct conversion architecture is used in both Receiver and Transmitter, to achieve the minimum possible power and area. The chip is fabricated in a standard 0.18um CMOS technology. In the transmit mode, the transmitter chain (Modulator to PA) consumes 25mW, while in the receive mode, the iv receiver chain (LNA to Demodulator) consumes 5mW. The Integer-N Frequency Synthesizer consumes 8.5mW. Other Low power circuits are reported; A 13.56 Passive RFID tag and a low power ADC suitable for Built-In-Testing applications.