Browsing by Subject "Field emission"
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Item Fabrication and analysis of carbon nanotube based emitters(2011-08) Mancevski, Vladimir; Markert, John T.; Yao, Zhen; Shih, Chih-Kang; Niu, Qian; Fernandez, BenitoWe have advanced the state-of-the-art for nano-fabrication of carbon nanotube (CNT) based field emission devices, and have conducted experimental and theoretical investigations to better understand the reasons for the high reduced brightness achieved. We have demonstrated that once the CNT emitter failure modes are better understood and resolved, such CNT emitters can easily reach reduced brightness on the order of 10⁹ A m⁻² sr⁻¹ V⁻¹ and noise levels of about 1%. These results are about 10% better than the best brightness results from a nanotip emitter archived to date. Our CNT emitters have order of magnitude better reduced brightness than state-of-the-art commercial Schottky emitters. Our analytical models of field emission matched our experimental results well. The CNT emitter was utilized in a modified commercial scanning electron microscope (SEM) and briefly operated to image a sample. We also report a successful emission from a lateral CNT emitter element having a single suspended CNT, where the electron emission is from the CNT sidewall. The lateral CNT emitters have reduced brightness on the order of 10⁸ A m⁻² sr⁻¹ V⁻¹, about 10X less than the vertical CNT emitters we fabricated and analyzed. The characteristics of the lateral field emitter were analyzed for manually fabricated and directly grown CNT emitters. There was no significant difference in performance based on the way the CNT emitter was fabricated. We showed that the fabrication technique for making a single CNT emitter element can be scaled to an array of elements, with potential density of 10⁶-10⁷ CNT emitters per cm². We also report a new localized, site selective technique for editing carbon nanotubes using water vapor and a focused electron beam. We have demonstrated the use of this technique to cut CNTs to length with 10s of nanometers precision and to etch selected areas from CNTs with 10s of nanometers precision. The use of this technique was demonstrated by editing a lateral CNT emitter. We have conducted investigations to demonstrate the effects of higher local water pressure on the CNT etching efficiency. This was achieved by developing a new method of localized gas delivery with a nano-manipulator.Item Synthesis of silicon/germanium nanowires and field emission studies of 1-D nanostructures(2007-05) Bae, Joonho, 1972-; Shih, Chih-KangUsing the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are grown. We find the high growth rate is responsible for the silicon nanowires with less growth defects when they are grown by use of silicon tetrachloride as a precursor and hydrogen as a carrier gas. Based on this funding, large area, high aspect ratio, h111i oriented silicon nanowires are successfully grown on Si (111) and Si (100). Novel growth mechanisms of VLS growth method were discovered in SiOx nanoflowers and silicon nanocones. In SiOx nanoflowers grown at the tip of silicon nanowires, it is found that they are produced via the enhanced oxidation of silicon at the gold-silicon interface. Furthermore, the analysis of the flower pattern reveals that it is the observation of the dense branching morphology on nanoscale and on spherical geometry. For the silicon nanocones, they are grown by the in situ etching of the catalysts of Ga/Al by HCl during the growth. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) reveal that the nanocones are composed of amorphous silicon oxides and crystalline Si. Based on the similar chemistry of hydrogen reduction of SiCl₄ for the growth of silicon nanowires, single crystalline germanium nanowires are grown by use of GeCl4 as a precursor and H₂ as a carrier gas. As one of important application of one dimensional nanostructures, the field emission properties of 1-D nanostructures are explored. The field emission properties of a single graphite nanocone are measured in SEM. The inter-electrode separation is controlled using scanning tunneling microscopy (STM) approach method, allowing the precise and ne determination of the separation. Its Fowler-Nordheim plot shows it emits currents in accordance with the Fowler-Nordheim field emission. Its onset voltage, field enhancement factor show that its basic field emission parameters are comparable to those of a single carbon nanotube. It is observed that single nanocone is damaged after emitting a current of about 100 nA, which seems to be due to its hollow interior structure.