Browsing by Subject "Failure analysis"
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Item Focused ion beam assisted semiconductor sample preparation for subsequent transmission electron microscope examination(2013-08) Myasishchev, Denis; Gale, Richard O.; Borhani, MarcusFailure analysis (FA) of semiconductor samples is traditionally performed using a dual beam Scanning Electron Microscope (SEM). Part of the material is milled out by a Focused Ion Beam (FIB) and the resulting cross section is examined. However, in certain cases the SEM imaging is insufficient (e.g., very fine defects or crystalline structure defects). Transmission Electron Microscopy (TEM) analysis is then necessary. A brief introduction to electron microscopy in general is presented. Advantages and disadvantages of SEM vs. TEM are discussed. Motivation for the project is stated. An overview of TEM sample preparation techniques is given and the method of choice is discussed in more detail. Methodology developed as part of the current work is described, including the FIB recipe, the lift-out procedure, and the TEM imaging routine. Results are demonstrated on a specific via defect. Shorter versions of the developed procedures intended as step-by-step guides are included in the appendix.