Browsing by Subject "Delta-sigma"
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Item Integrated temperature sensors in deep sub-micron CMOS technologies(2014-05) Chowdhury, Golam Rasul; Hassibi, ArjangIntegrated temperature sensors play an important role in enhancing the performance of on-chip power and thermal management systems in today's highly-integrated system-on-chip (SoC) platforms, such as microprocessors. Accurate on-chip temperature measurement is essential to maximize the performance and reliability of these SoCs. However, due to non-uniform power consumption by different functional blocks, microprocessors have fairly large thermal gradient (and variation) across their chips. In the case of multi-core microprocessors for example, there are task-specific thermal gradients across different cores on the same die. As a result, multiple temperature sensors are needed to measure the temperature profile at all relevant coordinates of the chip. Subsequently, the results of the temperature measurements are used to take corrective measures to enhance the performance, or save the SoC from catastrophic over-heating situations which can cause permanent damage. Furthermore, in a large multi-core microprocessor, it is also imperative to continuously monitor potential hot-spots that are prone to thermal runaway. The locations of such hot spots depend on the operations and instruction the processor carries out at a given time. Due to practical limitations, it is an overkill to place a big size temperature sensor nearest to all possible hot spots. Thus, an ideal on-chip temperature sensor should have minimal area so that it can be placed non-invasively across the chip without drastically changing the chip floor plan. In addition, the power consumption of the sensors should be very low to reduce the power budget overhead of thermal monitoring system, and to minimize measurement inaccuracies due to self-heating. The objective of this research is to design an ultra-small size and ultra-low power temperature sensor such that it can be placed in the intimate proximity of all possible hot spots across the chip. The general idea is to use the leakage current of a reverse-bias p-n junction diode as an operand for temperature sensing. The tasks within this project are to examine the theoretical aspect of such sensors in both Silicon-On-Insulator (SOI), and bulk Complementary Metal-Oxide Semiconductor (CMOS) technologies, implement them in deep sub-micron technologies, and ultimately evaluate their performances, and compare them to existing solutions.Item System-level design and analysis of an embedded audio signal processing application(2016-05) Dollo, Philippe Marc; Sun, Nan; Akinwande, DejiIn this report, a design is proposed for an embedded system that implements an audio beamforming application. This design provides the key considerations for both the analog front-end, and the digital signal processing that would be included on-chip. The analog portion of the design implements a multi-order delta-sigma ADC, and the digital portion of the design implements a digital decimation filter and a beamforming filter. The objective of the project is to develop a system that could be used in a real-world implementation, with design decisions which attempt to account for system-wide specifications, rather than focusing on block-level performance alone.Item VCO-based analog-to-digital conversion(2012-12) Hamilton, Joseph Garrett; Hassibi, Arjang; Viswanathan, T. R., doctor of electrical engineeringThis dissertation presents a novel [delta sigma] analog-to-digital converter architecture which replaces the operational amplifier-based integrator with a pair of tunable oscillators. A switched-capacitor V-I converter is used to combine the input voltage with a feedback DAC output and convert it into a current for two pseudo-differential current-controlled oscillators. The oscillator outputs are counted with a digital counter, and a digital back-end [delta sigma] modulator is used to truncate the high-resolution counter outputs for the feedback DAC path. This architecture has compelling advantages in deep sub-micron and emerging technologies where supply voltages are decreasing to a point that traditional analog architectures are no longer feasible. Additionally, this architecture takes advantage of the increased speed in these short-channel technologies. Measured results on a 6.08mW prototype in TSMC 0.18um achieving 63.5dB in a 2MHz bandwidth are presented.