Single-bit fails in electrically-erasable programmable read-only memory (EEPROM)
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The semiconductor industry relies heavily on the reliability of its products. This thesis examines single-bit fails that were detected in a subset of nonvolatile semiconductor memory, electrically-erasable programmable read-only memory (EEPROM). A brief introduction to the various memory types is presented for a better understanding of the evolution of EEPROMs. The test used to detect the fails is also described. This paper also presents the results of several experiments done to evaluate the effect of several processing steps and process parameters on the overall functional yield of the device and on the level of single-bit fails.