Unrestricted.2016-11-142012-06-012016-11-142010-12http://hdl.handle.net/2346/23463Increasing interest in high action wide pulse width applications for SGTO’s has heightened the need to develop a comprehensive simulation model. The model simulation would be able to predict device operation, aiding in the further development of the SGTO in high action wide pulse width circuits. A means to predict failure and device degradation would lead to higher reliability. The Thesis explores the development of a model for simulation in a high action wide pulse width circuit.application/pdfengTransient simulation of Si SGTOTransient simulation of SiC SGTOThesis