First-principles and kinetic Monte Carlo simulation of dopant diffusion in strained Si and other materials

Banerjee, Sanjay1567964702008-08-282017-05-112008-08-282017-05-112006http://hdl.handle.net/2152/2762textelectronicengCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.Semiconductor doping--Mathematical modelsSiliconMonte Carlo methodFirst-principles and kinetic Monte Carlo simulation of dopant diffusion in strained Si and other materialsThesis