First principles modeling of arsenic and fluorine behavior in crystalline silicon during ultrashallow junction formation

Hwang, Gyeong S.Edgar, Thomas F.727147382008-08-282017-05-112008-08-282017-05-112006http://hdl.handle.net/2152/2520textelectronicengCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.Semiconductors--JunctionsSemiconductor dopingSilicon crystalsDensity functionalsArsenicFluorineFirst principles modeling of arsenic and fluorine behavior in crystalline silicon during ultrashallow junction formationThesis