Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

Banerjee, Sanjay1662293572008-08-282017-05-112008-08-282017-05-112006http://hdl.handle.net/2152/2903textelectronicengCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.Metal oxide semiconductor field-effect transistors--Design and constructionGermanium compoundsGermanium crystalsChemical vapor depositionMetal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor depositionThesis