Reliability study of gallium arsenide refractory gate field effect transistors

Unrestricted.2016-11-142011-02-182016-11-141983-12http://hdl.handle.net/2346/13215Not availableapplication/pdfengSemiconductorsField-effect transistorsElectrodiffusionGallium arsenideReliability study of gallium arsenide refractory gate field effect transistorsThesis