Lee, Jack Chung-Yeung686832922008-08-282017-05-112008-08-282017-05-112004http://hdl.handle.net/2152/2044textelectronicengCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.DielectricsHafnium oxideElectrodesBreakdown (Electricity)Interfaces (Physical sciences)Tantalum alloysRuthenium compoundsSilicon oxideInterface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technologyThesis3143883