Fabrication modeling and reliability of novel architecture and novel materials based MOSFET devices

dc.contributor.advisorBanerjee, Sanjayen
dc.creatorDey, Sagniken
dc.date.accessioned2008-08-28T23:04:24Zen
dc.date.accessioned2017-05-11T22:17:26Z
dc.date.available2008-08-28T23:04:24Zen
dc.date.available2017-05-11T22:17:26Z
dc.date.issued2006en
dc.descriptiontexten
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifierb65008200en
dc.identifier.oclc123363632en
dc.identifier.urihttp://hdl.handle.net/2152/2714en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshMetal oxide semiconductor field-effect transistors--Design and constructionen
dc.subject.lcshMetal oxide semiconductor field-effect transistors--Materialsen
dc.subject.lcshGermanium compoundsen
dc.subject.lcshSilicon compoundsen
dc.titleFabrication modeling and reliability of novel architecture and novel materials based MOSFET devicesen
dc.type.genreThesisen

Files