The growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor deposition

dc.contributor.advisorDupuis, Russellen
dc.creatorWong, Michael Mingen
dc.date.accessioned2011-07-27T15:01:53Zen
dc.date.accessioned2017-05-11T22:22:58Z
dc.date.available2011-07-27T15:01:53Zen
dc.date.available2017-05-11T22:22:58Z
dc.date.issued2003-05en
dc.descriptiontexten
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifier.urihttp://hdl.handle.net/2152/12616en
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.rights.restrictionRestricteden
dc.subjectTransistorsen
dc.subjectMetal organic chemical vapor depositionen
dc.titleThe growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor depositionen

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