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dc.degree.departmentElectrical and Computer Engineeringen_US
dc.rights.availabilityUnrestricted.
dc.creatorThomas, Patricia Dolores
dc.date.accessioned2016-11-14T23:19:34Z
dc.date.available2011-02-18T18:54:47Z
dc.date.available2016-11-14T23:19:34Z
dc.date.issued2001-05
dc.identifier.urihttp://hdl.handle.net/2346/8568en_US
dc.description.abstractCurrent methods of predicting the final-test performance of complex MOSFET devices are time consuming and can be unreliable. Also, large quantities of empirical data, required to develop a correlation to package-test speed, can only be collected weeks into the fabrication process. It would be useful early in the process to predict the final test IC performance before unnecessary commitments are made to a customer. To help solve this problem, statistical analysis of measurable, in-line parameters of a MOSFET transistor are used to develop process and circuit models of the devices. The parameters determined to have the greatest influence on speed performance, based on simulating IC speed, are determined. The known variation in these parameters can aid in better predictions of IC performance spreads.
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherTexas Tech Universityen_US
dc.subjectIntegrated circuits -- Design and constructionen_US
dc.subjectIntegrated circuits -- Computer simulationen_US
dc.subjectMetal oxide semiconductor field-effect transistorsen_US
dc.titleIntegrated circuit performance modeling using MOSFET in-line parameters
dc.typeThesis


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