Reliability of a Gallium Arsenide MESFET

Date

1980-12

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Texas Tech University

Abstract

Not Available.

Description

Keywords

Field-effect transistors, Integrated circuits, Electrodiffusion, Gallium arsenide, Reliability (Engineering)

Citation

URI

http://hdl.handle.net/2346/18415

Collections

Texas Tech University