Deep level transient spectroscopy and uniaxial stress system

Deep level transient spectroscopy (DLTS) combined with uniaxial stress will not only determine the energy level of a defect center in semiconductor but also tell its symmetry, which is very important for identifying the structure of a defect center. As a thesis for my Master's of Science Degree, this report explains the theories of DLTS and uniaxial stress, our experimental system and some initial results obtained from this system.