Investigation in gate oxide integrity
Williamson, Adam J.
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Consistent and dependable transistors are necessary for all integrated circuit applications. Of particular interest is the gate silicon oxide (SiO2) region of the transistor. Ramped current stress breakdown, capacitance-voltage measurements (CV), time-dependent dielectric breakdown (TDDB), and atomic force microscopy (AFM) were used to evaluate the reliability of a 12.2 nm thick thermally grown transistor gate oxide. The data revealed that both decreasing furnace temperature and using a less aggressive pre-gate clean greatly increased quality of the Si02 gate.