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dc.contributor.advisorSanjay, Banerjee
dc.creatorLee, Se-hoon, 1981-
dc.date.accessioned2017-04-20T14:15:44Z
dc.date.accessioned2018-01-22T22:32:06Z
dc.date.available2017-04-20T14:15:44Z
dc.date.available2018-01-22T22:32:06Z
dc.date.issued2007-05
dc.identifierdoi:10.15781/T2FX7438X
dc.identifier.urihttp://hdl.handle.net/2152/46535
dc.description.abstractAs standard silicon CMOS device shrinks to the deep submicron regime, it has become harder and harder to meet the requirement of International Technology Roadmap for Semiconductors (ITRS) high performance integrated circuit devices. Because of this, structural approaches such as multi-gate MOSFETs (e.g. FinFET, Tri-gate FET, bridge FET) or material approaches using high mobility materials like SiGe/Ge or III-IV instead of silicon have been researched and have become more and more popular in the literature these days. This work presents novel SiGe bridge device fabrication by applying both approaches to maximize the benefits and planar SiGe channel PMOSFET characteristics.en_US
dc.format.mediumelectronicen_US
dc.language.isospaen_US
dc.relation.ispartofUT Electronic Theses and Dissertationsen_US
dc.rightsCopyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en_US
dc.subjectSemiconductorsen_US
dc.subjectIntegrated circuitsen_US
dc.subjectHigh mobility materialsen_US
dc.titleSiGe channel MOSFETs with high-K and metal gate : novel GAA bridge PMOSFETs and planar short channel PMOSFETsen_US
dc.typeThesisen_US
dc.description.departmentElectrical and Computer Engineeringen_US
dc.type.genreThesisen_US
dc.rights.restrictionRestricteden_US


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