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dc.contributor.advisorYu, Edward T.en
dc.contributor.committeeMemberBank, Seth Ren
dc.contributor.committeeMemberSreenivasan, S Ven
dc.contributor.committeeMemberDodabalapur, Ananthen
dc.contributor.committeeMemberSchaadt, Danielen
dc.creatorLi, Xiaohan, Ph. D.en
dc.date.accessioned2015-09-25T17:28:29Zen
dc.date.accessioned2018-01-22T22:28:11Z
dc.date.available2015-09-25T17:28:29Zen
dc.date.available2018-01-22T22:28:11Z
dc.date.issued2015-05en
dc.date.submittedMay 2015en
dc.identifierdoi:10.15781/T2F304en
dc.identifier.urihttp://hdl.handle.net/2152/31407en
dc.descriptiontexten
dc.description.abstractPhoton management via submicron and subwavelength nanostructures has been extensively studied over the last decade, and has become one of the most important approaches of boosting the energy conversion efficiency for thin-film photovoltaic devices. The incorporation of low dimensional nanostructures, such as GaAs/InGaAs quantum wells, into typical GaAs single-junction cells will extend the cell absorption further into the sub-GaAs bandgap region but usually results in reduced cell open-circuit voltage. As a consequence, various bandgap engineering techniques for improving the energy conversion efficiency for quantum well solar cells have been reported. This dissertation will describe studies of light trapping in multiple GaAs/InGaAs quantum well solar cells via nanostructured front side dielectric coating and back side metal/dielectric contacts, photovoltaic performance enhancement for bulk and flexible thin-film GaAs solar cells through subwavelength nanostructured antireflection coating, and bandgap engineering techniques for GaAs/InGaAs multiple quantum well solar cells. In the study of nanostructured dielectric antireflection coatings, a 5.8% increase in short-circuit current density is observed for the GaAs/In₀.₃Ga₀.₇As multiple quantum well cell coated with TiO₂ nanostructured coating compared to the cell coated with conventional Si₃N₄ single-layer antireflection coating even in the presence of high surface recombination. Numerical simulation shows that as high as 13% increase in short-circuit current density can be achieved without surface recombination. In the study of GaAs/In₀.₃Ga₀.₇As multiple quantum well solar cells integrated with nanostructured back side metal/dielectric contacts, as high as 2.9% per quantum well external quantum efficiency is achieved, significantly surpassing the 1% per quantum well external quantum efficiency typically observed in quantum well solar cells. In both studies, two major mechanisms contributing to the increased longer wavelength quantum well absorption have been elucidated: Fabry-Perot resonances and scattering into guided optical modes. In application of subwavelength-scale optical nanostructures on bulk and flexible epitaxial lift-off GaAs solar cells for broadband, omnidirectional improvement of photovoltaic performance, 1.1× increase in short-circuit current density is observed for the bulk GaAs cell fully integrated with optical nanostructures compared to the unpatterned cell (1.09× increase in short-circuit current density for flexible epitaxial lift-off GaAs cell) at normal incidence, while 1.67× increase in short-circuit current density is observed (1.52× increase in short-circuit current density is observed for flexible epitaxial lift-off GaAs cell) at 80° angle of incidence. In the study of bandgap engineering strategies for improving the photovoltaic performance for GaAs/InGaAs multiple quantum well solar cells, a quantum well solar cell with graded quantum well depths, which has an average 18% indium concentration in quantum wells, is shown to yield improvements in both open-circuit voltage and short-circuit current density compared to a GaAs/In₀.₁₈Ga₀.₈₂As quantum well solar cell with constant quantum well depths across the intrinsic region. The results of this study suggest that such an approach can also be implemented in quantum well solar cells with more complex quantum well structures, such as ternary or quaternary quantum wells, where the conduction and valence band offsets of each quantum well can be simultaneously engineered.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.subjectSolar cellsen
dc.subjectLight trappingen
dc.subjectAntireflectionen
dc.subjectBandgap engineeringen
dc.titleHigh efficiency III/V thin film solar cells : light trapping, antireflection, and band structure engineeringen
dc.typeThesisen
dc.description.departmentElectrical and Computer Engineeringen
dc.date.updated2015-09-25T17:28:29Zen
dc.creator.orcid0000-0003-3485-0866en


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