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dc.contributor.advisorKorgel, Brian A.en
dc.identifier.oclc71003443en
dc.creatorSchricker, April Dawnen
dc.date.accessioned2008-08-28T22:42:07Zen
dc.date.accessioned2017-05-11T22:17:06Z
dc.date.available2008-08-28T22:42:07Zen
dc.date.available2017-05-11T22:17:06Z
dc.date.issued2005en
dc.identifierb6112607xen
dc.identifier.urihttp://hdl.handle.net/2152/2301en
dc.descriptiontexten
dc.format.mediumelectronicen
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshNanowiresen
dc.subject.lcshGallium arsenide--Electric propertiesen
dc.subject.lcshBismuth compounds--Electric propertiesen
dc.subject.lcshGermanium--Electric propertiesen
dc.titleElectrical properties of single GaAs, Bi₂S₃ and Ge nanowiresen
dc.description.departmentChemical Engineeringen
dc.type.genreThesisen


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