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Federated Electronic Theses and Dissertations
University of Texas at Austin
Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology
Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology
Date
2004
Authors
Kim, Young-Hee
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http://hdl.handle.net/2152/2044
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University of Texas at Austin
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