Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor
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In nanometer technologies, process variation control and low power have emerged as the first order design goal after high performance. Process variations cause high variability in performance and power consumption of an IC, which affects the overall yield. Short channel effects (SCEs) deteriorate the MOSFET performance and lead to higher leakage power. Double gate devices suppress SCEs and are potential candidates for replacing Bulk technology in nanometer nodes. Threshold voltage control in planar asymmetric double gate transistor (IGFET) using a fourth terminal provides an effective means of combating process variations and low power design. In this thesis, using various case studies, we analyzed the suitability of IGFET for variation control and low power design. We also performed an extensive comparison between IGFET and Bulk for reducing variability, improving yield and leakage power reduction using power gating. We also proposed a new circuit topology for IGFET, which on average shows 33.8 percent lower leakage and 34.9 percent lower area at the cost of 2.8 percent increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized devices designed using new circuit topology for IGFET.